Method for corrupting data stored in a memory, and corresponding integrated circuit

A method for corrupting a piece of data stored in a memory-cell of an integrated circuit, said memory-cell comprising a state transistor having a floating gate storing a charge representative of the piece of data and a control gate, the method comprising:

• coupling a capacitive structure to the floating gate, the capacitive structure including a first electrically-conductive body coupled to the floating gate, a second electrically-conductive body and a dielectric body between the second electrically-conductive body and the first electrically-conductive body;
• detecting an invasive or non-invasive attack of the integrated circuit using a detection circuit;
• generating a non-zero voltage in response to the detecting;
• applying the non-zero voltage to the second electrically-conductive body of the capacitive structure;
• generating a leakage current by the capacitive structure in response to the non-zero voltage applied to the second electrically-conductive body, wherein the leakage current passes through the dielectric body between the second electrically-conductive body and the first electrically-conductive body;
• and
• applying said leakage current to the floating gate to modify the charge of the floating gate and corrupt said piece of data.