Semiconductor device and method of manufacturing semiconductor device
AssigneeSK hynix Inc.
InventorSeung Ju OH
Life of this patent
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Abstract
A semiconductor device includes a stack including a plurality of first insulating layers alternately stacked with a plurality of second insulating layers, a contact plug extending through the stack, a gate structure surrounding the stack and including a plurality of conductive layers alternately stacked with the plurality of first insulating layers, a separation structure located between the stack and the gate structure, and a contact pattern extending around the separation structure, and electrically connecting the contact plug and a first conductive layer among the plurality of conductive layers.
Claims24
A semiconductor device comprising:
- a stack including a plurality of first insulating layers alternately stacked with a plurality of second insulating layers;
- a contact plug extending through the stack;
- a gate structure surrounding the stack and including a plurality of conductive layers alternately stacked with the plurality of first insulating layers;
- a separation structure located between the stack and the gate structure;
- and
- a contact pattern extending around the separation structure and electrically connecting the contact plug and a first conductive layer among the plurality of conductive layers.
A semiconductor device comprising:
- a stack including a plurality of first insulating layers alternately stacked with a plurality of second insulating layers;
- a contact plug extending through the stack;
- a gate structure surrounding the stack and including a plurality of conductive layers alternately stacked with the plurality of first insulating layers;
- a separation structure located between the stack and the gate structure and including a plurality of pillars arranged around the contact plug and a plurality of extensions interconnecting the pillars;
- and
- a contact pattern extending around the separation structure and electrically connecting the contact plug and a first conductive layer among the plurality of conductive layers.
Dependencies are inferred from the claim text.