US 12,707,632 B2 · Semiconductor memory device

Abstract

A semiconductor memory device includes a memory cell that extends in a first horizontal direction, a second horizontal direction that intersects the first horizontal direction, and a vertical direction. The memory cell includes a first transistor including a first channel structure, a second transistor including a second channel structure, a charge storage element electrically connected to a first end of the second channel structure and adjacent to the first channel structure a first bit line electrically connected to a first end of the first channel structure and that extends in the second horizontal direction, a selection line electrically connected to a second end of the first channel structure and that extends in the second horizontal direction, a second bit line electrically connected to a second end of the second channel structure and that extends in the second horizontal direction, and a gate line that extends in the vertical direction.

Claims20

Dependent claims

A semiconductor memory device comprising:

a memory cell that extends in a first horizontal direction, a second horizontal direction that intersects the first horizontal direction, and a vertical direction, wherein the memory cell comprises a first transistor comprising a first channel structure, a second transistor comprising a second channel structure, and a charge storage element electrically connected to a first end of the second channel structure and adjacent to the first channel structure;
a first bit line electrically connected to a first end of the first channel structure and that extends in the second horizontal direction;
a selection line electrically connected to a second end of the first channel structure and that extends in the second horizontal direction;
a second bit line electrically connected to a second end of the second channel structure and that extends in the second horizontal direction;
and
a gate line adjacent to each of the first channel structure and the second channel structure and that extends in the vertical direction.

3 more elements

A semiconductor memory device comprising:

a plurality of memory cells that extend in a first horizontal direction, a second horizontal direction that intersects the first horizontal direction, and a vertical direction, wherein each memory cell of the plurality of memory cells comprises a first transistor comprising a first channel structure, a second transistor comprising a second channel structure, and a charge storage element electrically connected to a first end of the second channel structure and adjacent to the first channel structure;
a plurality of first bit lines, wherein a first bit line of the plurality of first bit lines is electrically connected to a first end of the first channel structure, and wherein the first bit line extends in the second horizontal direction;
a plurality of selection lines, wherein a selection line of the plurality of selection lines is electrically connected to a second end of first channel structure, and wherein the selection line extends in the second horizontal direction;
a plurality of second bit lines, wherein a second bit line of the plurality of second bit lines is electrically connected to a second end of the second channel structure, and wherein the second bit line extends in the second horizontal direction;
and
a plurality of gate lines, wherein a gate line of the plurality of gate lines is adjacent to the first end of the first channel structure, the second end of the first channel structure, the first end of the second channel structure, and the second end of the second channel structure, wherein the gate line extends in the vertical direction,
wherein the first channel structure of the plurality of memory cells comprises a portion with a nonlinear shape, and
wherein a first end of charge storage elements of the plurality of memory cells and the first end of the second channel structures of the plurality of memory cells are adjacent to the portion with the nonlinear shape of the first channel structure of the plurality of memory cells.

5 more elements

A semiconductor memory device comprising:

a plurality of memory cells on a substrate and that extend in a first horizontal direction, a second horizontal direction that intersects the first horizontal direction, and a vertical direction, wherein each memory cell of the plurality of memory cells comprises a first transistor and a second transistor;
a plurality of first bit lines that extend in the second horizontal direction;
a plurality of selection lines that extend in the second horizontal direction;
a plurality of second bit lines that extend in the second horizontal direction;
and
a plurality of gate lines that extend in the vertical direction,
wherein the first transistor comprises a charge storage element, which is configured to operate as a floating gate, and a first channel structure, and one of the plurality of first bit lines and one of the plurality of selection lines are electrically connected to a first end of the first channel structure and a second end of the first channel structure,
the second transistor comprises a second channel structure, and the charge storage element and one of the plurality of second bit lines are electrically connected to a first end and a second end of the second channel structure, wherein a pair of gate lines of the plurality of gate lines are adjacent to the first end of the first channel structure, the second end of the first channel structure, the first end of the second channel structure, and the second end of the second channel structure, and a word line electrically connects the pair of gate lines,
the first channel structure comprises a pair of horizontal parts spaced apart from one another in the vertical direction and that extend in the first horizontal direction, and a vertical part that extends in the vertical direction and is electrically connected to the pair of horizontal parts, and
a first end of the charge storage element and the first end of the second channel structure are between the pair of horizontal parts of the first channel structure.

7 more elements

Dependencies are inferred from the claim text.

Semiconductor memory device

Life of this patent

Semiconductor memory device

Life of this patent

Abstract

Claims20