Semiconductor devices

A semiconductor device comprising:

• first gate electrodes spaced apart from each other in a vertical direction perpendicular to an upper surface of a substrate;
• a second gate electrode extending in the vertical direction through the first gate electrodes;
• and
• a memory channel structure on a sidewall of the second gate electrode,
• wherein the memory channel structure includes:
• a second ion reservoir pattern disposed on the sidewall of the second gate electrode and extending in the vertical direction;
• a second barrier pattern disposed on a sidewall of the second ion reservoir pattern and extending in the vertical direction;
• a channel disposed on a sidewall of the second barrier pattern and extending in the vertical direction;
• and
• first ion reservoir patterns between the channel and sidewalls of the first gate electrodes, respectively, the first ion reservoir patterns being spaced apart from each other in the vertical direction.

A semiconductor device comprising:

• a peripheral circuit pattern on a substrate;
• a bit line on the peripheral circuit pattern;
• first gate electrodes on the bit line, the first gate electrodes being spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate;
• a second gate electrode extending in the vertical direction through the first gate electrodes;
• a memory channel structure disposed on a sidewall of the second gate electrode and electrically connected to the bit line;
• and
• a common source plate (CSP) disposed on and electrically connected to the memory channel structure,
• wherein the memory channel structure includes:
• a second ion reservoir pattern disposed on the sidewall of the second gate electrode and extending in the vertical direction;
• a second electrolyte pattern or a second barrier pattern disposed on a sidewall of the second ion reservoir pattern and extending in the vertical direction;
• a channel disposed on a sidewall of the second electrolyte pattern or the second barrier pattern and extending in the vertical direction;
• and
• first ion reservoir patterns between the channel and sidewalls of the first gate electrodes, respectively, the first ion reservoir patterns being spaced apart from each other in the vertical direction.