H10D 30/6891
Characterised by the shapes, relative sizes or dispositions of the floating gate
Official title: {characterised by the shapes, relative sizes or dispositions of the floating gate electrode}
H10D30/6891 (Characterised by the shapes, relative sizes or dispositions of the floating gate) appears on 4,574 US grants and 4,654 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,574
- Published applications
- 4,654
- Assignees
- 553
- Inventors
- 4,782
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 9 | 0 |
| 1993 | 9 | 0 |
| 1994 | 16 | 0 |
| 1995 | 24 | 0 |
| 1996 | 17 | 0 |
| 1997 | 39 | 0 |
| 1998 | 66 | 0 |
| 1999 | 102 | 0 |
| 2000 | 109 | 0 |
| 2001 | 140 | 47 |
| 2002 | 132 | 151 |
| 2003 | 146 | 149 |
| 2004 | 178 | 254 |
| 2005 | 166 | 273 |
| 2006 | 201 | 291 |
| 2007 | 189 | 327 |
| 2008 | 176 | 307 |
| 2009 | 196 | 258 |
| 2010 | 220 | 183 |
| 2011 | 199 | 168 |
| 2012 | 183 | 156 |
| 2013 | 167 | 158 |
| 2014 | 188 | 190 |
| 2015 | 188 | 250 |
| 2016 | 255 | 206 |
| 2017 | 190 | 163 |
| 2018 | 164 | 147 |
| 2019 | 154 | 155 |
| 2020 | 159 | 165 |
| 2021 | 119 | 135 |
| 2022 | 109 | 139 |
| 2023 | 122 | 122 |
| 2024 | 102 | 116 |
| 2025 | 81 | 79 |
| 2026 | 54 | 65 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device and electronic system including the same6 Oct 2026US 12,757,720 B2Samsung Electronics Co., Ltd.
- Non-volatile memory cell with ONO compound insulation layer between floating and control gates and a method of fabrication1 Sep 2026US 12,727,159 B2Silicon Storage Technology, Inc.
- Non-volatile memory device1 Sep 2026US 12,727,204 B2Iotmemory Technology Inc.
- Biological material sensing semiconductor device25 Aug 2026US 12,716,863 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Biological material sensing semiconductor device1 Oct 2026US 2026/0298867 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and electronic system including the same1 Oct 2026US 2026/0304759 A1Samsung Electronics Co., Ltd.
- Device leakage and yield for cells1 Oct 2026US 2026/0304839 A1QUALCOMM Incorporated
- Method for manufacturing non-volatile memory device24 Sep 2026US 2026/0293217 A1Iotmemory Technology Inc.
Most cited
By later US patents
- Multi-state memory1,008US 6,222,762 B1SanDisk Corporation · 2001
- EEPROM with split gate source side injection602US 5,313,421 ASunDisk Corporation · 1994
- Semiconductor memory devices including an air gap and methods of fabricating the same480US 9,166,012 B2Samsung Electronics Co., Ltd. · 2015
- Semiconductor device and method of manufacturing the same473US 8,710,580 B2Kabushiki Kaisha Toshiba · 2014
- Nonvolatile semiconductor memory471US 8,779,502 B2Kabushiki Kaisha Toshiba · 2014