H10D 30/6893
Wherein the floating gate has multiple non-connected parts
Official title: {wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate}
H10D30/6893 (Wherein the floating gate has multiple non-connected parts) appears on 748 US grants and 835 published applications in this corpus.
Search patents in H10D- Granted patents
- 748
- Published applications
- 835
- Assignees
- 201
- Inventors
- 1,076
- Latest grant
- 24 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 6 | 0 |
| 2001 | 12 | 2 |
| 2002 | 9 | 16 |
| 2003 | 8 | 14 |
| 2004 | 24 | 44 |
| 2005 | 27 | 57 |
| 2006 | 52 | 76 |
| 2007 | 48 | 100 |
| 2008 | 46 | 81 |
| 2009 | 60 | 77 |
| 2010 | 55 | 48 |
| 2011 | 54 | 45 |
| 2012 | 56 | 32 |
| 2013 | 33 | 47 |
| 2014 | 63 | 51 |
| 2015 | 51 | 54 |
| 2016 | 55 | 29 |
| 2017 | 28 | 15 |
| 2018 | 15 | 12 |
| 2019 | 7 | 3 |
| 2020 | 9 | 11 |
| 2021 | 7 | 5 |
| 2022 | 5 | 7 |
| 2023 | 4 | 2 |
| 2024 | 4 | 2 |
| 2025 | 0 | 2 |
| 2026 | 2 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Flash memory structure with enhanced floating gate25 Jun 2024US 12,022,651 B2Taiwan Semiconductor Manufacturing Company.Ltd
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- Non-volatile memory device with vertical state transistor and vertical selection transistor26 Mar 2024US 11,943,931 B2STMicroelectronics (Rousset) SAS
- Method for manufacuring semiconductor device, semiconductor device, and memory device25 Jun 2026US 2026/0181964 A1Gigadevice Semiconductor (Hefei) Inc.
- Flash memory structure with enhanced floating gate30 Apr 2026US 2026/0122890 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device and method for manufacturing memory device23 Apr 2026US 2026/0113937 A1Hyundai Motor Company
- Semiconductor memory device and manufacturing method of semiconductor memory device18 Dec 2025US 2025/0386553 A1SK hynix Inc.
- Semiconductor memory device and method for forming the same26 Jun 2025US 2025/0212401 A1Winbond Electronics Corp.
Most cited
By later US patents
- Semiconductor device and method of manufacturing the same473US 8,710,580 B2Kabushiki Kaisha Toshiba · 2014
- Monolithic three dimensional array of charge storage devices containing a planarized surface361US 6,881,994 B2Matrix Semiconductor, Inc. · 2005
- Memory cell comprising dynamic random access memory (DRAM) nanoparticles and nonvolatile memory (NVM) nanoparticle265US 7,759,715 B2Micron Technology, Inc. · 2010
- Dual-gate device and method256US 7,612,411 B22009
- Semiconductor device and method of manufacture thereof251US 7,224,019 B2Kabushiki Kaisha Toshiba · 2007