Electrode structure including nano dot pattern and semiconductor device and electronic system including the same

A semiconductor device, comprising:

• a substrate;
• a cell array structure on the substrate, the cell array structure including a plurality of electrodes and a plurality of insulating layers which are alternately stacked;
• a vertical channel structure penetrating the plurality of electrodes;
• and
• a nano dot pattern in a first electrode of the plurality of electrodes, the nano dot pattern including a first pattern parallel to a bottom surface of the first electrode, a second pattern parallel to a side surface of the first electrode, and a third pattern parallel to a top surface of the first electrode, and each of the first pattern, the second pattern, and the third pattern including nano dots,
• wherein the side surface of the first electrode is parallel to a side surface of the vertical channel structure,
• wherein the nano dots of the first pattern are spaced apart from the bottom surface of the first electrode and are arranged parallel to the bottom surface of the first electrode,
• wherein the nano dots of the second pattern are spaced apart from the side surface of the first electrode and are arranged parallel to the side surface of the first electrode, and
• wherein the nano dots of the third pattern are spaced apart from the top surface of the first electrode and are arranged parallel to the top surface of the first electrode.

An electronic system, comprising:

• a three-dimensional semiconductor memory device;
• and
• a controller electrically connected to the three-dimensional semiconductor memory device, the controller being configured to control the three-dimensional semiconductor memory device,
• wherein the three-dimensional semiconductor memory device includes:
• a substrate,
• a cell array structure on the substrate, the cell array structure including a plurality of electrodes and a plurality of insulating layers which are alternately stacked,
• a vertical channel structure penetrating the plurality of electrodes, and
• a nano dot pattern in a first electrode of the plurality of electrodes, the nano dot pattern including a first pattern parallel to a bottom surface of the first electrode, a second pattern parallel to a side surface of the first electrode, and a third pattern parallel to a top surface of the first electrode, and each of the first pattern, the second pattern, and the third pattern including nano dots,
• wherein the side surface of the first electrode is parallel to a side surface of the vertical channel structure,
• wherein the nano dots of the first pattern are spaced apart from the bottom surface of the first electrode and are arranged parallel to the bottom surface of the first electrode,
• wherein the nano dots of the second pattern are spaced apart from the side surface of the first electrode and are arranged parallel to the side surface of the first electrode, and
• wherein the nano dots of the third pattern are spaced apart from the top surface of the first electrode and are arranged parallel to the top surface of the first electrode.