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AssigneesGigadevice Semiconductor (Shanghai) Inc., Gigadevice Semiconductor Inc., Gigadevice Semiconductor (Hefei) Inc., Suzhou Freethink Information Technology Co., Ltd., Gigadevice Semiconductor (Xian) Inc.
InventorsJing XU, Meng QIAN, Yisheng XU
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A method for manufacturing a semiconductor device, a semiconductor device, and a memory device are provided. The method includes forming shallow trench isolation structures in a substrate, where each shallow trench isolation structure has a protruding portion protruding from the surface of the substrate and first trenches are defined between the adjacent protruding portions of the shallow trench isolation structures; forming floating gates in first trenches and performing a first etching on a part of the protruding portions of the shallow trench isolation structures, where second trenches are formed between adjacent floating gates; performing a narrowing process on the floating gates; performing a second etching on a remaining part of the protruding portions of the shallow trench isolation structures to widen the second trenches; and forming a control gate, where the control gate is partially filled in the second trenches.
A method for manufacturing a semiconductor device, comprising:
A semiconductor device, comprising:
A memory device, comprising a semiconductor device, a configuration circuit, and a wiring;
Dependencies are inferred from the claim text.