H10D 30/6892
Having at least one additional gate other than the floating gate and
Official title: {having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate}
H10D30/6892 (Having at least one additional gate other than the floating gate and) appears on 1,368 US grants and 1,452 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,368
- Published applications
- 1,452
- Assignees
- 216
- Inventors
- 1,447
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 4 | 0 |
| 1993 | 2 | 0 |
| 1994 | 10 | 0 |
| 1995 | 7 | 0 |
| 1996 | 4 | 0 |
| 1997 | 7 | 0 |
| 1998 | 11 | 0 |
| 1999 | 17 | 0 |
| 2000 | 27 | 0 |
| 2001 | 21 | 5 |
| 2002 | 8 | 14 |
| 2003 | 17 | 11 |
| 2004 | 13 | 33 |
| 2005 | 23 | 44 |
| 2006 | 25 | 51 |
| 2007 | 33 | 59 |
| 2008 | 40 | 41 |
| 2009 | 30 | 42 |
| 2010 | 37 | 38 |
| 2011 | 37 | 32 |
| 2012 | 32 | 25 |
| 2013 | 35 | 45 |
| 2014 | 45 | 52 |
| 2015 | 61 | 104 |
| 2016 | 109 | 102 |
| 2017 | 112 | 102 |
| 2018 | 91 | 80 |
| 2019 | 83 | 94 |
| 2020 | 98 | 102 |
| 2021 | 72 | 79 |
| 2022 | 58 | 67 |
| 2023 | 69 | 68 |
| 2024 | 55 | 70 |
| 2025 | 47 | 52 |
| 2026 | 27 | 40 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device and electronic system including the same6 Oct 2026US 12,757,720 B2Samsung Electronics Co., Ltd.
- Non-volatile memory cell with ONO compound insulation layer between floating and control gates and a method of fabrication1 Sep 2026US 12,727,159 B2Silicon Storage Technology, Inc.
- Non-volatile memory device1 Sep 2026US 12,727,204 B2Iotmemory Technology Inc.
- Non-volatile memory device and method for manufacturing the same4 Aug 2026US 12,701,750 B2Iotmemory Technology Inc.
- Method for manufacturing non-volatile memory device24 Sep 2026US 2026/0293217 A1Iotmemory Technology Inc.
- Anti-dishing structure for embedded memory3 Sep 2026US 2026/0262220 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Embedded memory device and method of fabricating the same13 Aug 2026US 2026/0239616 A1Taiwan Semiconductor Manufacturing Company.Ltd
- NOR Memory Cell with Floating Gate30 Jul 2026US 2026/0221196 A1Greenliant IP LLC
- Semiconductor structure and method of manufacturing the same23 Jul 2026US 2026/0214893 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Multi-state memory1,008US 6,222,762 B1SanDisk Corporation · 2001
- EEPROM with split gate source side injection602US 5,313,421 ASunDisk Corporation · 1994
- Nonvolatile semiconductor memory471US 8,779,502 B2Kabushiki Kaisha Toshiba · 2014
- Flash memory cells with separated self-aligned select and erase gates, and process of fabrication314US 6,747,310 B2Actrans System Inc. · 2004
- Vertical system integration289US 7,402,897 B2Elm Technology Corporation · 2008