Semiconductor structure and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYUN-FENG KAO, MING-YEN CHUANG, KATHERINE H. CHIANG
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Abstract
A semiconductor structure includes a first dielectric layer, a first gate structure in the first dielectric layer, a second gate structure in the first dielectric layer, and a conductive structure in the first dielectric layer and disposed under the first gate structure and the second gate structure. The first gate structure is coupled to the conductive structure, and the second gate structure is separated from the first gate structure and the conductive structure.
Claims20
A semiconductor structure, comprising:
- a first dielectric layer;
- a first gate structure in the first dielectric layer;
- a second gate structure in the first dielectric layer;
- and
- a conductive structure in the first dielectric layer and disposed under the first gate structure and the second gate structure;
- wherein the first gate structure is coupled to the conductive structure, and the second gate structure is separated from the first gate structure and the conductive structure.
A method of manufacturing a semiconductor structure, comprising:
- forming a conductive structure in a first dielectric layer;
- forming a first gate structure electrically coupled to the conductive structure;
- forming a second gate structure adjacent to the first gate structure;
- disposing a gate dielectric over the first gate structure, the second gate structure and the first dielectric layer;
- disposing a channel layer over the gate dielectric;
- and
- forming a source/drain region over the channel layer,
- wherein the second gate structure is separated from the conductive structure and the first gate structure, and at least a portion of the conductive structure is overlapped by the second gate structure from a plan view.
A method of manufacturing a semiconductor structure, comprising:
- forming a conductive structure in a dielectric layer;
- removing a portion of the dielectric layer to form a first recess exposing the conductive structure and a second recess adjacent to the first recess;
- forming a first gate structure within and conformal to the first recess, wherein the first gate structure is electrically coupled to the conductive structure;
- forming a second gate structure within and conformal to the second recess, wherein at least a first portion of the first dielectric layer is disposed between the second gate structure and the conductive structure;
- disposing a gate dielectric over the first gate structure, the second gate structure and the first dielectric layer;
- disposing a channel layer over the gate dielectric;
- and
- forming a source/drain region over the channel layer,
- wherein at least a portion of the conductive structure is overlapped by the second gate structure from a plan view.
Dependencies are inferred from the claim text.