H10D 30/6894
Having one gate at least partly in a trench
Official title: {having one gate at least partly in a trench}
H10D30/6894 (Having one gate at least partly in a trench) appears on 530 US grants and 557 published applications in this corpus.
Search patents in H10D- Granted patents
- 530
- Published applications
- 557
- Assignees
- 152
- Inventors
- 807
- Latest grant
- 23 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 1 | 0 |
| 1998 | 4 | 0 |
| 1999 | 5 | 0 |
| 2000 | 13 | 0 |
| 2001 | 14 | 4 |
| 2002 | 14 | 14 |
| 2003 | 17 | 14 |
| 2004 | 24 | 39 |
| 2005 | 19 | 45 |
| 2006 | 26 | 36 |
| 2007 | 36 | 58 |
| 2008 | 26 | 53 |
| 2009 | 36 | 34 |
| 2010 | 36 | 31 |
| 2011 | 31 | 26 |
| 2012 | 28 | 22 |
| 2013 | 22 | 14 |
| 2014 | 23 | 14 |
| 2015 | 14 | 21 |
| 2016 | 14 | 12 |
| 2017 | 17 | 10 |
| 2018 | 14 | 15 |
| 2019 | 12 | 15 |
| 2020 | 14 | 10 |
| 2021 | 12 | 12 |
| 2022 | 10 | 20 |
| 2023 | 9 | 10 |
| 2024 | 16 | 12 |
| 2025 | 8 | 6 |
| 2026 | 8 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- FCNVM-ALEFD (fully covered non-volatile memory (NVM) over advanced low electrostatic field transistor (ALEFD)21 Apr 2026US 12,610,589 B1
- NOR memory cell with floating gate14 Apr 2026US 12,603,134 B2Greenliant IP LLC
- NOR Memory Cell with Floating Gate30 Jul 2026US 2026/0221196 A1Greenliant IP LLC
- Electronic method and device comprising memory cell25 Jun 2026US 2026/0181885 A1STMicroelectronics International N. V.
- Method for manufacuring semiconductor device, semiconductor device, and memory device25 Jun 2026US 2026/0181964 A1Gigadevice Semiconductor (Hefei) Inc.
- Memory component and method for fabricating the same18 Jun 2026US 2026/0173367 A1United Microelectronics Corp.
- Manufacturing method for memory device, memory device, and memory cell18 Jun 2026US 2026/0173368 A1Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
Most cited
By later US patents
- Floating gate transistor with horizontal gate layers stacked next to vertical body279US 6,744,094 B2Micron Technology, Inc. · 2004
- Ultra high density flash memory228US 5,973,356 AMicron Technology, Inc. · 1999
- Method for forming high density flash memory207US 6,238,976 B1Micron Technology, Inc. · 2001
- Non-volatile memory cell having dual gate electrodes114US 5,751,037 ASony Corporation · 1998
- Method of fabricating a trenched flash memory cell113US 6,436,765 B1United Microelectronics Corp. · 2002