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US 2026/0173367 A1Published application
Memory component and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsLiang Yi, Chi REN
Life of this patent
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Abstract
A memory component includes two memory units, a first gate and a doped region. The two memory units are disposed on a substrate. The first gate is disposed between the two memory units, and the first gate includes an embedded portion embedded in the substrate. The doped region is disposed in the substrate and surrounds the embedded portion.
Claims20
A memory component, comprising:
- two memory units disposed on a substrate;
- a first gate disposed between the two memory units, wherein the first gate comprises an embedded portion embedded in the substrate;
- and
- a doped region disposed in the substrate and surrounding the embedded portion.
1 more element
A method for fabricating a memory component, comprising:
- forming two memory units on a substrate;
- forming a recess in the substrate, wherein the recess is located between the two memory units;
- forming a doped region in the substrate around the recess;
- and
- forming a first gate between the two memory units, wherein the first gate comprises an embedded portion disposed in the recess, and the doped region surrounds the embedded portion.
2 more elements
Dependencies are inferred from the claim text.