H10D 30/62
Fin field-effect transistors [finfet]
Official title: Fin field-effect transistors [FinFET]
H10D30/62 (Fin field-effect transistors [finfet]) appears on 15,947 US grants and 18,214 published applications in this corpus.
Search patents in H10D- Granted patents
- 15,947
- Published applications
- 18,214
- Assignees
- 721
- Inventors
- 9,640
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 7 | 0 |
| 1995 | 5 | 0 |
| 1996 | 5 | 0 |
| 1997 | 6 | 0 |
| 1998 | 4 | 0 |
| 1999 | 4 | 0 |
| 2000 | 8 | 0 |
| 2001 | 15 | 6 |
| 2002 | 17 | 15 |
| 2003 | 29 | 33 |
| 2004 | 54 | 105 |
| 2005 | 97 | 248 |
| 2006 | 134 | 275 |
| 2007 | 175 | 351 |
| 2008 | 207 | 359 |
| 2009 | 211 | 294 |
| 2010 | 304 | 231 |
| 2011 | 259 | 248 |
| 2012 | 205 | 249 |
| 2013 | 281 | 400 |
| 2014 | 438 | 617 |
| 2015 | 679 | 1032 |
| 2016 | 1115 | 1293 |
| 2017 | 1354 | 1411 |
| 2018 | 1381 | 1402 |
| 2019 | 1450 | 1482 |
| 2020 | 1464 | 1759 |
| 2021 | 1261 | 1417 |
| 2022 | 1172 | 1371 |
| 2023 | 1107 | 1193 |
| 2024 | 1072 | 1120 |
| 2025 | 953 | 925 |
| 2026 | 469 | 378 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 30/6211Having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates4,469
- H10D 30/6219Characterised by the source or drain electrodes4,178
- H10D 30/6212Having fin-shaped semiconductor bodies having non-rectangular cross-sections1,753
- H10D 30/6215Having multiple independently-addressable gate electrodes594
- H10D 30/6217Having non-uniform gate electrodes522
- H10D 30/6218Of the accumulation type86
Recent patents
- Semiconductor device having an asymmetric fin-type patterns formed between two symmetric fin-type patterns with varying width along center vertical line of the fins6 Oct 2026US 12,757,368 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method for fabricating the same6 Oct 2026US 12,757,415 B2United Microelectronics Corp.
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Low-resistance and thermally stable contacts with boride, indium, or gallium metal compound layers6 Oct 2026US 12,757,430 B2Intel Corporation
- Semiconductor device with embedded sigma-shaped structure6 Oct 2026US 12,757,431 B2Nanya Technology Corporation
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device and manufacturing method thereof8 Oct 2026US 2026/0313901 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure8 Oct 2026US 2026/0313931 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Controlled doping in a gate dielectric layer8 Oct 2026US 2026/0313932 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming semiconductor devices8 Oct 2026US 2026/0313934 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Semiconductor devices and methods of manufacture thereof1,575US 8,785,285 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017