Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChang-Yih Chen, Kuo-Hsing Lee, Chun-Hsien Lin, Kun-Szu Tseng, Sheng-Yuan Hsueh, Yao-Jhan Wang
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Abstract
A method for fabricating a semiconductor device includes the steps of first providing a substrate having a non-metal-oxide semiconductor capacitor (non-MOSCAP) region and a MOSCAP region, forming a fin-shaped structure on the MOSCAP region, forming a shallow trench isolation (STI) around the substrate and the fin-shaped structure, performing a first etching process to remove part of the STI on the MOSCAP region, and then performing a second etching process to remove part of the STI on the non-MOSCAP region and the MOSCAP region.
Claims7
A method for fabricating a semiconductor device, comprising:
- providing a substrate having a non-metal-oxide semiconductor capacitor (non-MOSCAP) region and a MOSCAP region;
- forming a fin-shaped structure on the MOSCAP region;
- forming a shallow trench isolation (STI) around the substrate and the fin-shaped structure;
- performing a first etching process to remove part of the STI on the MOSCAP region;
- and
- performing a second etching process to remove part of the STI on the non-MOSCAP region and the MOSCAP region immediately after the first etching process.
Dependencies are inferred from the claim text.