H10D 30/6212
Having fin-shaped semiconductor bodies having non-rectangular cross-sections
Official title: {having fin-shaped semiconductor bodies having non-rectangular cross-sections}
H10D30/6212 (Having fin-shaped semiconductor bodies having non-rectangular cross-sections) appears on 1,753 US grants and 1,908 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,753
- Published applications
- 1,908
- Assignees
- 176
- Inventors
- 2,154
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
| 2002 | 4 | 4 |
| 2003 | 3 | 3 |
| 2004 | 7 | 17 |
| 2005 | 13 | 35 |
| 2006 | 14 | 38 |
| 2007 | 18 | 38 |
| 2008 | 31 | 51 |
| 2009 | 31 | 40 |
| 2010 | 42 | 25 |
| 2011 | 43 | 33 |
| 2012 | 19 | 25 |
| 2013 | 31 | 49 |
| 2014 | 51 | 73 |
| 2015 | 80 | 96 |
| 2016 | 99 | 144 |
| 2017 | 157 | 178 |
| 2018 | 158 | 161 |
| 2019 | 178 | 195 |
| 2020 | 193 | 206 |
| 2021 | 144 | 136 |
| 2022 | 117 | 105 |
| 2023 | 112 | 86 |
| 2024 | 103 | 82 |
| 2025 | 79 | 65 |
| 2026 | 19 | 23 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device having an asymmetric fin-type patterns formed between two symmetric fin-type patterns with varying width along center vertical line of the fins6 Oct 2026US 12,757,368 B2Samsung Electronics Co., Ltd.
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including two-dimensional material and method of fabricating the same6 Oct 2026US 12,757,463 B2Samsung Electronics Co., Ltd.
- Semiconductor device having a bump between fin-shaped structures15 Sep 2026US 12,740,108 B2United Microelectronics Corp.
- Semiconductor device and fabricating the same8 Sep 2026US 12,733,253 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Three dimensional integrated circuit and fabrication thereof1 Oct 2026US 2026/0304867 A1National Yang Ming.Chiao Tung University
- Semiconductor device and method for manufacturing semiconductor device17 Sep 2026US 2026/0282426 A1Denso Corporation
- Semiconductor structure and method for forming the same10 Sep 2026US 2026/0271384 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit structures having gate cut plug removed from trench contact3 Sep 2026US 2026/0262257 A1Intel Foundry IP LLC
- Semiconductor structure and fabrication method thereof13 Aug 2026US 2026/0239659 A1Nanya Technology Corporation
Most cited
By later US patents
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- FinFET with high mobility and strain channel582US 8,729,634 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- FinFET device having a channel defined in a diamond-like shape semiconductor structure537US 8,841,701 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014