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US 12,757,463 B2Granted
Semiconductor device including two-dimensional material and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMinsu Seol, Junyoung Kwon, Keunwook Shin, Minseok Yoo
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Abstract
A semiconductor device may include a two-dimensional material layer including a two-dimensional semiconductor material having a polycrystalline structure; metallic nanoparticles partially on the two-dimensional material layer; a source electrode and a drain electrode respectively on both sides of the two-dimensional material layer; and a gate insulating layer and a gate electrode on the two-dimensional material layer between the source electrode and the drain electrode.
Claims20
A semiconductor device comprising:
- a two-dimensional material layer including a two-dimensional semiconductor material having a polycrystalline structure;
- metallic nanoparticles partially on the two-dimensional material layer;
- a source electrode and a drain electrode respectively on both sides of the two-dimensional material layer;
- and
- a gate insulating layer and a gate electrode on the two-dimensional material layer between the source electrode and the drain electrode,
- wherein the metallic nanoparticles comprise Ru, RuO, Mo, W, TiN, or Ti.
3 more elements
A method of fabricating a semiconductor device, the method comprising:
- forming a two-dimensional material layer on a substrate, the two-dimensional material layer including a two-dimensional semiconductor material having a polycrystalline structure;
- depositing metallic nanoparticles on the two-dimensional material layer;
- forming a gate insulating layer and a gate electrode on the two-dimensional material layer;
- and
- forming a source electrode and a drain electrode on both sides of the two-dimensional material layer, respectively,
- wherein the metallic nanoparticles comprise Ru, RuO, Mo, W, TiN, or Ti.
3 more elements
Dependencies are inferred from the claim text.