US 9,443,769 B2Granted

Wrap-around contact

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorsSung-Li Wang, Neng-Kuo Chen, Ding-Kang Shih, Meng-Chun Chang, Yi-An Lin, Gin-Chen Huang, Chen-Feng Hsu, Hau-Yu Lin, Chih-Hsin Ko, Sey-Ping Sun, Clement Hsingjen Wann

Life of this patent

Estimating the term…

patentgrep

Loading patent…

Abstract

Fin structures are formed on a substrate. An isolation region is between the fin structures. The fin structures comprise epitaxial regions extending above the isolation region. Each of the epitaxial regions has a widest mid-region between an upper-surface and an under-surface. A dual-layer etch stop is formed over the fin structures and comprises a first sub-layer and a second sub-layer. The first sub-layer is along the upper- and under-surfaces and the isolation region. The second sub-layer is over the first sub-layer and along the upper-surfaces, and the second sub-layer merges together proximate the widest mid-regions of the epitaxial regions. Portions of the dual-layer etch stop are removed from the upper- and under-surfaces. A dielectric layer is formed on the upper- and under-surfaces. A metal layer is formed on the dielectric layer on the upper-surfaces. A barrier layer is formed on the metal layer and along the under-surfaces.

Claims15

Dependent claims

A method comprising:

forming a first fin structure and a second fin structure on a substrate, an isolation region being disposed between the first fin structure and the second fin structure, the first fin structure comprising a first epitaxial region extending above the isolation region, the second fin structure comprising a second epitaxial region extending above the isolation region, each of the first epitaxial region and the second epitaxial region having a widest mid-region between an upper-surface and an under-surface;
forming a dual-layer etch stop over the first fin structure and the second fin structure, the dual-layer etch stop comprising a first sub-layer and a second sub-layer, the first sub-layer being along the upper-surface of the first epitaxial region, the under-surface of the first epitaxial region, the upper-surface of the second epitaxial region, the under-surface of the second epitaxial region, and the isolation region, the second sub-layer being over the first sub-layer and along the upper-surface of the first epitaxial region and the upper-surface of the second epitaxial region, the second sub-layer merging together proximate the widest mid-region of the first epitaxial region and the widest mid-region of the second epitaxial region;
removing at least portions of the dual-layer etch stop from the upper-surface and the under-surface of the first epitaxial region and from the upper-surface and the under-surface of the second epitaxial region;
forming a first dielectric layer on at least portions of the upper-surface and the under-surface of the first epitaxial region and on the upper-surface and the under-surface of the second epitaxial region;
forming a metal layer on the first dielectric layer on at least the upper-surface of the first epitaxial region and the upper-surface of the second epitaxial region;
and
forming a barrier layer on the metal layer and along the under-surface of the first epitaxial region and the under-surface of the second epitaxial region.

4 more elements

A method comprising:

forming a neighboring pair of fin structures on a substrate, the fin structures each comprising an epitaxial region extending above an isolation region disposed between the fin structures;
conformally forming a first etch stop layer over the fin structures and the isolation region;
forming a second etch stop layer on the first etch stop layer and on upper surfaces of the epitaxial regions, the second etch stop layer merging between the fin structures proximate mid-regions of the epitaxial regions of the fin structures, the merging of the second etch stop layer forming an enclosed void between the fin structures;
forming a dielectric layer over the second etch stop layer;
removing at least a portion of the second etch stop layer;
removing at least a portion of the first etch stop layer from the upper surfaces of the epitaxial regions and from under-surfaces of the epitaxial regions;
and
forming a contact structure on the fin structures, the contact structure comprising a metal oxide layer, a metal layer, and a metal nitride layer, the metal oxide layer being on the upper surfaces and under-surfaces of the epitaxial regions, the metal layer being on the metal oxide layer and along at least the upper surfaces of the epitaxial regions, and the metal nitride layer being on the metal layer and along the upper surfaces and under-surfaces of the epitaxial regions.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/257,809Filed 21 Apr 2014
Published: US 2015/0303118 A122 Oct 2015
Granted: 13 Sep 2016
Term ends: Not estimatedThe source records don’t support an estimate.

Classification31 codes

H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10D 30/0212
Of FETs having insulated gates [IGFET]: using self-aligned silicidation
H10D 30/024
Of FETs having insulated gates [IGFET]: of fin field-effect transistors [FinFET]
H10D 30/0245
Of fin field-effect transistors [FinFET]: by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins