FinFET device having a channel defined in a diamond-like shape semiconductor structure

A FinFET device comprising:

• a semiconductor substrate of a first semiconductor material;
• a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation and a sidewall surface of a third crystal plane orientation;
• a diamond shape structure of a second semiconductor material disposed over the top surface of the fin structure, wherein the diamond shape structure has a first surface of a second crystal plane orientation and second surface of the second crystal plane orientation, wherein the first surface of the second crystal plane orientation and the second surface of the second crystal plane orientation intersect each other at an apex of the diamond shape structure, the apex of the diamond shape structure being positioned further away from the semiconductor substrate than any other portion of the diamond structure, wherein the fin structure is embedded within the diamond shape structure and does not include any surface having the second crystal plane orientation, wherein the diamond shape structure physically contacts the top surface and the sidewall surface of the fin structure;
• a gate structure disposed over the diamond shape structure, wherein the gate structure separates a source region and a drain region;
• and
• a channel region defined in the diamond shape structure between the source and drain regions.

A FinFET device comprising:

• a semiconductor substrate of a first semiconductor material;
• a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation;
• a diamond shape structure of a second semiconductor material disposed over the top surface of the fin structure, wherein the diamond shape structure has a first surface of a second crystal plane orientation, wherein the fin structure extends into a portion of the diamond shaped structure and the fin structure is without any surface having the second crystal plane orientation, wherein a topmost surface of the fin structure is positioned above a bottommost surface of the diamond shape structure, the topmost surface of the fin structure being positioned further away from the semiconductor substrate than any other surface of the fin structure and the bottommost surface of the diamond shape structure being positioned closer to the semiconductor substrate than any other surface of the diamond shape structure;
• a gate structure disposed over the diamond shape structure, wherein the gate structure separates a source region and a drain region;
• and
• a channel region defined in the diamond shape structure between the source and drain regions.