Three dimensional integrated circuit and fabrication thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Yang Ming Chiao Tung University
InventorsChenming HU, Kuan-Neng CHEN, Po-Tsang HUANG, Bo-Jheng SHIH, Yu-Ming PAN, Ching-Lin CHEN
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Abstract
An IC structure includes a first transistor, a dielectric layer, a plurality of first semiconductor pillars, a semiconductor structure, and a second transistor. The first transistor is formed on a substrate. The dielectric layer is above the first transistor. The first semiconductor pillars are disposed over the substrate and extend through the dielectric layer. The semiconductor structure is disposed over the top surface of the dielectric layer. The second transistor is formed on the semiconductor structure.
Claims20
An integrated circuit (IC) structure comprising:
- a first transistor formed on a substrate;
- a dielectric layer above the first transistor;
- a plurality of first semiconductor pillars disposed over the substrate and extending through the dielectric layer;
- a semiconductor structure disposed over the dielectric layer;
- and
- a second transistor formed on the semiconductor structure.
An IC structure comprising:
- a first transistor on a substrate;
- an interconnect structure over the first transistor, the interconnect structure comprising a conductive via vertically extending above the substrate and a conductive line laterally extending above the conductive via;
- a first semiconductor pillar disposed on the substrate and having a top surface at a position higher than the conductive via and the conductive line;
- a first dielectric layer laterally surrounding an upper portion of the first semiconductor pillar and having a top surface substantially level with the top surface of the first semiconductor pillar;
- and
- a second transistor disposed above the first semiconductor pillar.
A method comprising:
- forming a first semiconductor pillar above a substrate;
- depositing a dielectric layer over the first semiconductor pillar;
- planarizing the dielectric layer until a top surface of the first semiconductor pillar is exposed;
- depositing a non-single crystalline semiconductor material over the first semiconductor pillar;
- performing an anneal process to crystallize the non-single crystalline semiconductor material into a single-crystalline semiconductor material;
- and
- forming a transistor on the single-crystalline semiconductor material.
Dependencies are inferred from the claim text.