H10D 30/6213
Having rounded corners
Official title: {having rounded corners}
H10D30/6213 (Having rounded corners) appears on 684 US grants and 770 published applications in this corpus.
Search patents in H10D- Granted patents
- 684
- Published applications
- 770
- Assignees
- 95
- Inventors
- 1,016
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 2 |
| 2003 | 1 | 2 |
| 2004 | 3 | 13 |
| 2005 | 9 | 25 |
| 2006 | 11 | 28 |
| 2007 | 14 | 22 |
| 2008 | 22 | 35 |
| 2009 | 16 | 17 |
| 2010 | 29 | 18 |
| 2011 | 21 | 18 |
| 2012 | 12 | 14 |
| 2013 | 13 | 21 |
| 2014 | 18 | 21 |
| 2015 | 29 | 30 |
| 2016 | 27 | 60 |
| 2017 | 57 | 63 |
| 2018 | 51 | 41 |
| 2019 | 53 | 68 |
| 2020 | 73 | 77 |
| 2021 | 45 | 52 |
| 2022 | 46 | 42 |
| 2023 | 44 | 32 |
| 2024 | 39 | 31 |
| 2025 | 30 | 25 |
| 2026 | 13 | 13 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device having an asymmetric fin-type patterns formed between two symmetric fin-type patterns with varying width along center vertical line of the fins6 Oct 2026US 12,757,368 B2Samsung Electronics Co., Ltd.
- Semiconductor device having a bump between fin-shaped structures15 Sep 2026US 12,740,108 B2United Microelectronics Corp.
- Heterogeneous metal line compositions for advanced integrated circuit structure fabrication11 Aug 2026US 12,707,697 B2Intel Corporation
- Integrated circuit structures having gate cut plug removed from trench contact4 Aug 2026US 12,701,746 B2Intel Corporation
- Footing removal in cut-metal process19 May 2026US 12,635,225 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit structures having gate cut plug removed from trench contact3 Sep 2026US 2026/0262257 A1Intel Foundry IP LLC
- Semiconductor device30 Jul 2026US 2026/0223447 A1Samsung Electronics Co., Ltd.
- Method for producing a semiconductor structure28 May 2026US 2026/0150319 A1Imec Vzw
- Continuous gate and fin spacer for advanced integrated circuit structure fabrication21 May 2026US 2026/0144027 A1Intel Corporation
- Semiconductor device with a fin-shaped active region and a gate electrode14 May 2026US 2026/0136584 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- FinFET with high mobility and strain channel582US 8,729,634 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Tri-gate devices and methods of fabrication426US 6,858,478 B2Intel Corporation · 2005
- Multiple gate field-effect transistors having oxygen-scavenged gate stack305US 9,564,489 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017