Integrated circuit structures having gate cut plug removed from trench contact

An integrated circuit structure, comprising:

• a fin;
• a gate electrode over the fin;
• a conductive trench contact adjacent to the gate electrode;
• a dielectric sidewall spacer between the gate electrode and the conductive trench contact;
• and
• a gate cut plug extending through the gate electrode and the dielectric sidewall spacer, the gate cut plug extending into but not entirely through the conductive trench contact, and the gate cut plug having an uppermost surface at a same level as an uppermost surface of the conductive trench contact.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a vertical stack of horizontal nanowires;
• a gate electrode over the vertical stack of horizontal nanowires;
• a conductive trench contact adjacent to the gate electrode;
• a dielectric sidewall spacer between the gate electrode and the conductive trench contact;
• and
• a gate cut plug extending through the gate electrode and the dielectric sidewall spacer, the gate cut plug extending into but not entirely through the conductive trench contact, and the gate cut plug having an uppermost surface at a same level as an uppermost surface of the conductive trench contact.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a fin;
• a gate electrode over the fin;
• a conductive trench contact adjacent to the gate electrode;
• a dielectric sidewall spacer between the gate electrode and the conductive trench contact;
• and
• a gate cut plug extending through the gate electrode and the dielectric sidewall spacer, the gate cut plug extending into but not entirely through the conductive trench contact, and the gate cut plug having an uppermost surface at a same level as an uppermost surface of the conductive trench contact.