Heterogeneous metal line compositions for advanced integrated circuit structure fabrication

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a first plurality of conductive interconnect lines in and spaced apart by a first dielectric layer above a substrate, wherein individual ones of the first plurality of conductive interconnect lines have a longest dimension along a first direction, wherein individual ones of the first plurality of conductive interconnect lines have an uppermost surface above an uppermost surface of the first dielectric layer, and wherein individual ones of the first plurality of conductive interconnect lines comprise:
• a first conductive fill material having sidewalls and a bottom, the first conductive fill material having a composition;
• and
• a first conductive barrier material along the sidewalls and the bottom of the first conductive fill material, the first conductive barrier material in contact with the first dielectric layer and with the first conductive fill material, and the first conductive barrier material having a first composition;
• and
• a second plurality of conductive interconnect lines in and spaced apart by a second dielectric layer above the first dielectric layer, wherein individual ones of the second plurality of conductive interconnect lines have a longest dimension along a second direction orthogonal to the first direction, and wherein individual ones of the second plurality of conductive interconnect lines comprise:
• a second conductive fill material having sidewalls and a bottom, the second conductive fill material having a composition, the composition of the second conductive fill material different than the composition of the first conductive fill material;
• and
• a second conductive barrier material along the sidewalls and the bottom of the second conductive fill material, the second conductive barrier material in contact with the second dielectric layer and with the second conductive fill material, and the second conductive barrier material having a second composition different than the first composition of the first conductive barrier material;
• and
• a conductive via coupling one of the first plurality of conductive interconnect lines directly to one of the second plurality of conductive interconnect lines.

A method of fabricating an integrated circuit structure, the method comprising:

• forming a first plurality of conductive interconnect lines in and spaced apart by a first dielectric layer above a substrate, wherein individual ones of the first plurality of conductive interconnect lines have a longest dimension along a first direction, wherein individual ones of the first plurality of conductive interconnect lines have an uppermost surface above an uppermost surface of the first dielectric layer, and wherein forming individual ones of the first plurality of conductive interconnect lines comprises:
• forming a first conductive barrier material;
• and
• forming a first conductive fill material having sidewalls and a bottom, the first conductive fill material having a composition, wherein the first conductive barrier material is along the sidewalls and the bottom of the first conductive fill material, the first conductive barrier material is in contact with the first dielectric layer and with the first conductive fill material, and the first conductive barrier material has a first composition;
• and
• forming a second plurality of conductive interconnect lines in and spaced apart by a second dielectric layer above the first dielectric layer, wherein individual ones of the second plurality of conductive interconnect lines have a longest dimension along a second direction orthogonal to the first direction, wherein a conductive via couples one of the first plurality of conductive interconnect lines directly to one of the second plurality of conductive interconnect lines, and wherein forming individual ones of the second plurality of conductive interconnect lines comprises:
• forming a second conductive barrier material;
• and
• forming a second conductive fill material having sidewalls and a bottom, the second conductive fill material having a composition, the composition of the second conductive fill material different than the composition of the first conductive fill material, wherein the second conductive barrier material is along the sidewalls and the bottom of the second conductive fill material, the second conductive barrier material is in contact with the second dielectric layer and with the second conductive fill material, and the second conductive barrier material has a second composition different than the first composition of the first conductive barrier material.