Method for producing a semiconductor structure

Abstract

The present disclosure relates to method for producing a semiconductor structure. The method comprises: providing a semiconductor fin on a substrate, the semiconductor fin comprising a first side surface, a second side surface opposing the first side surface, and a top surface, wherein a mask covers the top surface of the semiconductor fin; exposing a portion of the top surface of the semiconductor fin by removing a portion of the mask, the exposed portion of the top surface and the first side surface forming an exposed top corner of the semiconductor fin; rounding the exposed top corner of the semiconductor fin by oxidizing the exposed portion of the top surface and the first side surface.

Dependencies are inferred from the claim text.