H10D 30/6211
Having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
Official title: {having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates}
H10D30/6211 (Having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates) appears on 4,469 US grants and 5,318 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,469
- Published applications
- 5,318
- Assignees
- 292
- Inventors
- 4,565
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 5 | 1 |
| 2002 | 1 | 3 |
| 2003 | 3 | 2 |
| 2004 | 2 | 9 |
| 2005 | 3 | 41 |
| 2006 | 17 | 41 |
| 2007 | 21 | 70 |
| 2008 | 39 | 97 |
| 2009 | 46 | 45 |
| 2010 | 66 | 43 |
| 2011 | 46 | 46 |
| 2012 | 31 | 28 |
| 2013 | 44 | 57 |
| 2014 | 59 | 102 |
| 2015 | 145 | 244 |
| 2016 | 283 | 348 |
| 2017 | 338 | 420 |
| 2018 | 407 | 401 |
| 2019 | 413 | 415 |
| 2020 | 429 | 514 |
| 2021 | 341 | 430 |
| 2022 | 375 | 523 |
| 2023 | 381 | 482 |
| 2024 | 380 | 437 |
| 2025 | 357 | 369 |
| 2026 | 228 | 150 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device having an asymmetric fin-type patterns formed between two symmetric fin-type patterns with varying width along center vertical line of the fins6 Oct 2026US 12,757,368 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method for fabricating the same6 Oct 2026US 12,757,415 B2United Microelectronics Corp.
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,432 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming semiconductor structure6 Oct 2026US 12,757,456 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device and manufacturing method thereof8 Oct 2026US 2026/0313901 A1Taiwan Semiconductor Manufacturing Company.Ltd
- FINFET Devices with Backside Power Rail and Backside Self-Aligned Via8 Oct 2026US 2026/0313945 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Finfet device structure with extra fin8 Oct 2026US 2026/0313946 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Field effect transistor having segmented channel region8 Oct 2026US 2026/0313947 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Semiconductor devices and methods of manufacture thereof1,575US 8,785,285 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor structures and methods with high mobility and high energy bandgap materials544US 8,836,016 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014