Semiconductor structures and methods with high mobility and high energy bandgap materials

A structure comprising:

• a semiconductor substrate;
• a first semiconductor material on the substrate, the first semiconductor material having an energy bandgap greater than 1 eV, the first semiconductor material having a surface distal from the semiconductor substrate comprising a plurality of facets;
• a fin comprising a second semiconductor material on the first semiconductor material, the first semiconductor material being disposed between the semiconductor substrate and the second semiconductor material, the second semiconductor material having an electron mobility greater than 8,500 cm2/V-s or a hole mobility greater than 1,500 cm2/V-s;
• and
• a gate structure over the fin.

A structure comprising:

• a substrate comprising a first isolation region and a second isolation region, the first isolation region and the second isolation region extending into the substrate below a surface of the substrate;
• a high bandgap energy crystalline material over the surface of the substrate and between the first isolation region and the second isolation region, the high bandgap energy crystalline material comprising an upper surface having a plurality of facets, the high bandgap energy crystalline material having a bandgap energy greater than 1 eV;
• a fin comprising a semiconductor crystalline material over the high bandgap energy crystalline material, the semiconductor crystalline material having an electron mobility greater than 8,500 cm2/V-s or a hole mobility greater than 1,500 cm2/V-s;
• and
• a gate structure over the fin.