Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBo-Huan Hsin, Ying-Han Chiou, Ming-Yen Tsai
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Abstract
A semiconductor device and a manufacturing method of the semiconductor device are provided. The semiconductor device includes a source region, a drain region, a channel region and a plurality of fins. The channel region is located between the source region and the drain region, and the fins pass through the source region, the drain region and the channel region, wherein a number of the fins located in the source region and the drain region and a number of the fins located in the channel region are not equal.
Claims20
A manufacturing method of a semiconductor device, the semiconductor device comprising an active device having a substrate, a plurality of fins extending upward from the substrate, a source region, a drain region and a gate structure covering the fins between the source region and the drain region to form multi-channels between the source region and the drain region, the method manufacturing of the semiconductor device comprising:
- forming a photoresist layer on the gate structure, developing and removing a part of the photoresist layer, so that the photoresist layer is patterned to form an opening corresponding to a top location of a first fin to be removed among the fins;
- etching the first fin and the gate structure covering the first fin to form a recessed region in the gate structure so as to cut one of the multi-channels in the active device;
- and
- filling an insulating material into the recessed region.
A manufacturing method of a semiconductor device, comprising:
- forming a source region, a drain region and a plurality of fins on a substrate, the fins extending upward from the substrate and passing through the source region and the drain region of an active device;
- forming multi-channels within the fins and located between the source region and the drain region;
- and
- etching at least one of the fins to form a reduced number of the fins in the multi-channels of the active device.
A manufacturing method of a semiconductor device, comprising:
- forming a plurality of fins on a substrate, the fins extending upward from the substrate and passing through a source region and a drain region of the substrate;
- forming multi-channels within the fins and located between the source region and the drain region of an active device;
- forming a gate structure covering the fins and the multi-channels;
- and
- forming a recessed region in the gate structure corresponding to a top location of a first fin to be removed among the fins and etching the first fin to form a reduced number of the fins in the multi-channels of the active device.
Dependencies are inferred from the claim text.