H10D 30/6219
Characterised by the source or drain electrodes
Official title: {characterised by the source or drain electrodes}
H10D30/6219 (Characterised by the source or drain electrodes) appears on 4,178 US grants and 4,917 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,178
- Published applications
- 4,917
- Assignees
- 199
- Inventors
- 3,588
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 2 | 2 |
| 2003 | 0 | 1 |
| 2004 | 3 | 11 |
| 2005 | 5 | 8 |
| 2006 | 6 | 17 |
| 2007 | 8 | 14 |
| 2008 | 12 | 24 |
| 2009 | 11 | 16 |
| 2010 | 19 | 15 |
| 2011 | 14 | 24 |
| 2012 | 17 | 24 |
| 2013 | 18 | 39 |
| 2014 | 41 | 78 |
| 2015 | 99 | 172 |
| 2016 | 192 | 312 |
| 2017 | 345 | 386 |
| 2018 | 381 | 393 |
| 2019 | 429 | 487 |
| 2020 | 463 | 568 |
| 2021 | 396 | 492 |
| 2022 | 409 | 543 |
| 2023 | 403 | 426 |
| 2024 | 383 | 411 |
| 2025 | 350 | 342 |
| 2026 | 172 | 112 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure with butted-contact and methods of forming the same6 Oct 2026US 12,757,433 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with bottom dielectric isolation6 Oct 2026US 12,757,451 B2International Business Machines Corporation
- Diode structure for direct backside contact, backside power delivery network6 Oct 2026US 12,757,457 B2QUALCOMM Incorporated
- Contact structure with arched top surface and fabrication method thereof29 Sep 2026US 12,751,039 B2Taiwan Semiconductor Manufacturing Company.Ltd
- FINFET Devices with Backside Power Rail and Backside Self-Aligned Via8 Oct 2026US 2026/0313945 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Co-optimization of finfet devices by source/drain modulation and structures thereof8 Oct 2026US 2026/0313949 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Dipole patterning for cmos devices8 Oct 2026US 2026/0314032 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming source/drain contacts8 Oct 2026US 2026/0314054 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Finfet device having flat-top epitaxial features and method of making the same8 Oct 2026US 2026/0314059 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- System and methods for converting planar design to FinFET design1,326US 8,816,444 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014