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US 8,772,109 B2Granted
Apparatus and method for forming semiconductor contacts
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJean-Pierre Colinge
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Abstract
A method for forming semiconductor contacts comprises forming a germanium fin structure over a silicon substrate, depositing a doped amorphous silicon layer over the first drain/source region and the second drain/source region at a first temperature, wherein the first temperature is lower than a melting point of the germanium fin structure and performing a solid phase epitaxial regrowth process on the amorphous silicon layer at a second temperature, wherein the second temperature is lower than the melting point of the germanium fin structure.
Claims12
A method comprising:
- forming a germanium fin structure over a silicon substrate, wherein the germanium fin structure comprises:
- a channel connected between a first drain/source region and a second drain/source region;
- depositing an N+ amorphous silicon layer over the first drain/source region and the second drain/source region at a first temperature, wherein the first temperature is lower than a melting point of the germanium fin structure;
- and
- performing a solid phase epitaxial regrowth process on the amorphous silicon layer at a second temperature, wherein the second temperature is lower than the melting point of the germanium fin structure.
2 more elements
A method comprising:
- forming a germanium fin over a silicon substrate, wherein the germanium fin comprises:
- a first drain/source region;
- a second drain/source region;
- and
- a channel coupled between the first drain/source region and the second drain/source region;
- forming a gate structure over the channel, wherein the gate structure comprises:
- a gate dielectric layer;
- and
- a gate electrode layer formed over the gate dielectric layer;
- depositing a first amorphous silicon layer over the first drain/source region at a first temperature;
- depositing a second amorphous silicon layer over the second drain/source region at a second temperature;
- and
- performing a solid phase epitaxial regrowth process on the first amorphous silicon layer and the second amorphous silicon layer at a third temperature.
10 more elements
Dependencies are inferred from the claim text.