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US 12,757,451 B2Granted
Semiconductor device with bottom dielectric isolation
AssigneeInternational Business Machines Corporation
InventorsRuilong Xie, Kangguo Cheng, Julien Frougier, Chanro Park
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Abstract
A semiconductor device includes a substrate, a first shallow trench isolation (STI) liner disposed above and in contact with the substrate, a bottom dielectric isolation (BDI) region disposed above the substate and in contact with the STI liner, a device channel disposed above the BDI region, and a gate stack disposed above and in contact with the device channel.
Claims7
A semiconductor device comprising:
- a substrate;
- a first shallow trench isolation (STI) liner disposed above and in contact with the substrate;
- a bottom dielectric isolation (BDI) region disposed above the substate and in contact with the STI liner;
- a device channel disposed directly above the BDI region, the BDI extending across a full length and a full width of the device channel;
- and
- a gate stack disposed above and in contact with the device channel, the STI, and the BDI.
3 more elements
Dependencies are inferred from the claim text.