H10D 30/6217
Having non-uniform gate electrodes
Official title: {having non-uniform gate electrodes, e.g. gate conductors having varying doping}
H10D30/6217 (Having non-uniform gate electrodes) appears on 522 US grants and 561 published applications in this corpus.
Search patents in H10D- Granted patents
- 522
- Published applications
- 561
- Assignees
- 73
- Inventors
- 723
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 0 | 2 |
| 2004 | 2 | 2 |
| 2005 | 3 | 3 |
| 2006 | 3 | 5 |
| 2007 | 3 | 3 |
| 2008 | 2 | 4 |
| 2009 | 2 | 7 |
| 2010 | 4 | 10 |
| 2011 | 10 | 6 |
| 2012 | 6 | 8 |
| 2013 | 6 | 16 |
| 2014 | 10 | 17 |
| 2015 | 28 | 31 |
| 2016 | 45 | 72 |
| 2017 | 70 | 66 |
| 2018 | 57 | 56 |
| 2019 | 64 | 51 |
| 2020 | 52 | 51 |
| 2021 | 41 | 30 |
| 2022 | 32 | 33 |
| 2023 | 22 | 29 |
| 2024 | 23 | 24 |
| 2025 | 25 | 22 |
| 2026 | 12 | 13 |
By publication year. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device with high-k metal gate layer and method for preparing the same10 Sep 2026US 2026/0271330 A1Nanya Technology Corporation
- Semiconductor device with high-k metal gate layer and method for preparing the same10 Sep 2026US 2026/0271331 A1Nanya Technology Corporation
- Semiconductor device with high-k metal gate layer and method for preparing the same10 Sep 2026US 2026/0271332 A1Nanya Technology Corporation
- Multi-Gate Device And Method Of Fabrication Thereof21 May 2026US 2026/0143756 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and method355US 10,510,871 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2019
- Asymmetrical double gate or all-around gate MOSFET devices and methods for making same101US 6,800,885 B1Advance Micro Devices, Inc. · 2004
- Vertical gate-all-around TFET79US 9,385,195 B1STMicroelectronics S.r. l. · 2016
- Method of making split gate non-volatile memory cell with 3D FinFET structure64US 9,887,206 B2Silicon Storage Technology, Inc. · 2018
- Structure and method for 3D FinFET metal gate62US 9,876,114 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018