Semiconductor device and method for manufacturing a semiconductor device

A semiconductor device comprising a transistor, the transistor comprising:

• a plurality of gate trenches formed in a semiconductor substrate and extending in a first horizontal direction, the gate trenches patterning the semiconductor substrate into ridges, the ridges being arranged between two adjacent gate trenches, respectively;
• a gate electrode arranged in at least one of the gate trenches;
• a source region of a first conductivity type, a channel region, and a drift region of the first conductivity type, the source region, the channel region and a part of the drift region being arranged in the ridges, the gate electrode being insulated from the channel region and the drift region,
• wherein the channel region comprises a doped portion of a second conductivity type and a doping concentration of the doped portion decreases in a second horizontal direction intersecting the first horizontal direction from a region close to the gate electrode to a central portion of the ridges,
• wherein each of the ridges comprises first portions and second portions alternatingly arranged along the first horizontal direction,
• wherein the channel region is arranged in the first portions, wherein a body contact portion for electrically contacting the channel region is arranged in the second portions,
• wherein a source conductive layer is electrically connected to the body contact portion,
• wherein a doping profile along the second horizontal direction in at least one of the first portions of the ridges is identical with a doping profile along the second horizontal direction in at least one of the second portions of the ridges.