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US 2026/0271331 A1Published application
Semiconductor device with high-k metal gate layer and method for preparing the same
AssigneeNanya Technology Corporation
InventorsYAN-CHENG JHOU, CHUNG-PING LIN
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Abstract
A semiconductor device includes a fin structure disposed over a semiconductor substrate. The semiconductor device also includes a source/drain region disposed in the fin structure. The semiconductor device further includes a gate structure disposed over and extending into the fin structure. The gate structure is disposed adjacent to the source/drain region. The gate structure includes a high-k metal gate layer and a lower gate electrode layer disposed over the high-k metal gate layer.
Claims15
A semiconductor device, comprising:
- a first fin structure disposed over a semiconductor substrate and extending along a direction;
- a source/drain (S/D) region disposed in the first fin structure;
- and
- a gate structure disposed across the first fin structure and adjacent to the S/D region, wherein the gate structure comprises:
- a high-k metal gate layer;
- and
- a lower gate electrode layer disposed over the high-k metal gate layer,
- wherein a top surface of the first fin structure is higher than a bottom surface of the gate structure in a cross section along the direction of the first fin structure.
5 more elements
Dependencies are inferred from the claim text.