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US 2026/0271332 A1Published application
Semiconductor device with high-k metal gate layer and method for preparing the same
AssigneeNanya Technology Corporation
InventorsYAN-CHENG JHOU, CHUNG-PING LIN
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Abstract
A semiconductor device includes a fin structure disposed over a semiconductor substrate. The semiconductor device also includes a source/drain region disposed in the fin structure. The semiconductor device further includes a gate structure disposed over and extending into the fin structure. The gate structure is disposed adjacent to the source/drain region. The gate structure includes a high-k metal gate layer and a lower gate electrode layer disposed over the high-k metal gate layer.
Claims11
A method for preparing a semiconductor device, comprising:
- forming a first fin structure over a semiconductor substrate;
- partially removing the first fin structure to form a recess;
- depositing a high-k metal gate layer lining and partially filling the recess;
- depositing a lower gate electrode layer over the high-k metal gate layer, wherein a remaining portion of the recess is filled by the lower gate electrode layer;
- performing an etching process on the high-k metal gate layer and the lower gate electrode layer to form a gate structure;
- and
- forming a source/drain (S/D) region in the first fin structure and adjacent to the gate structure.
4 more elements
Dependencies are inferred from the claim text.