Multilayer work function metal in nanosheet stacks using a sacrificial oxide material

A semiconductor structure, comprising:

• a plurality of channels in a nanosheet stack over a semiconductor substrate;
• for each channel of the plurality of channels in the nanosheet stack:
• a first work function metal layer surrounding a respective channel in the nanosheet stack;
• a first oxide material layer fully surrounding the first work function metal layer;
• a second work function metal layer surrounding the first oxide material layer;
• a second oxide material layer fully surrounding the second work function metal layer;
• a third work function metal layer surrounding the second oxide material layer;
• and
• a third oxide material layer over the third work function metal layer;
• a fourth work function metal layer over the third oxide material layer;
• a fifth work function metal layer over the fourth work function metal layer;
• a cap layer over the fifth work function metal layer;
• a gate electrode material over the cap layer;
• and
• wherein the first work function metal layer, the first oxide material layer, the second work function metal layer, and the second oxide material layer are further stacked on the semiconductor substrate and present between the semiconductor substrate and the third work function metal layer of the respective channel of the plurality of channels in the nanosheet stack that is closest to the semiconductor substrate.