US 12,757,430 B2Granted

Low-resistance and thermally stable contacts with boride, indium, or gallium metal compound layers

AssigneeIntel Corporation

InventorsGilbert Dewey, Siddharth Chouksey, Nazila Haratipour, Christopher Jezewski, Jitendra Kumar Jha, Ilya V. Karpov, Matthew V. Metz, Arnab Sen Gupta, I-Cheng Tung, Nancy Zelick, Chi-Hing Choi, Dan S. Lavric

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Abstract

Contacts to p-type source/drain regions comprise a boride, indium, or gallium metal compound layer. The boride, indium, or gallium metal compound layers can aid in forming thermally stable low resistance contacts. A boride, indium, or gallium metal compound layer is positioned between the source/drain region and the contact metal layer. A boride, indium, or gallium metal compound layer can be used in contacts contacting p-type source/drain regions comprising boron, indium, or gallium as the primary dopant, respectively. The boride, indium, or gallium metal compound layers prevent diffusion of boron, indium, or gallium from the source/drain region into the metal contact layer and dopant deactivation in the source/drain region due to annealing and other high-temperature processing steps that occur after contact formation. Boride, indium, or gallium metal contact layers can also reduce the amount of silicide that forms in source/drain regions during processing by limiting contact metal diffusion into source/drain regions.

Claims12

Dependent claims

An apparatus, comprising:

a substrate comprising silicon;
one or more first layers located above and separate from the substrate, the one or more first layers comprising silicon and a first p-type dopant, the one or more first layers stacked vertically with respect to a surface of the substrate;
a second layer positioned adjacent to and encompassing the one or more first layers along at least a portion of a length of individual of the one or more first layers, the second layer comprising silicon, germanium, and the first p-type dopant;
a third layer positioned adjacent to at least a portion of an outer surface of the second layer along at least a portion of a length of the second layer, the third layer comprising a second p-type dopant and an element, the length of individual of the one or more first layers extending in a direction parallel to a surface of the substrate, the length of the second layer extending in the direction, the first p-type dopant being same as or different from the second p-type dopant;
a fourth layer positioned adjacent to the third layer, the fourth layer comprising a first metal;
and
a fifth layer located on the fourth layer, the fifth layer comprising a second metal.

4 more elements

Dependencies are inferred from the claim text.