H10D 30/721
Having a gate-to-body connection, i.e. bulk dynamic threshold voltage igfet
Official title: {having a gate-to-body connection, i.e. bulk dynamic threshold voltage IGFET (TFTs having gate-to-body connection H10D30/6708)}
H10D30/721 (Having a gate-to-body connection, i.e. bulk dynamic threshold voltage igfet) appears on 98 US grants and 98 published applications in this corpus.
Search patents in H10D- Granted patents
- 98
- Published applications
- 98
- Assignees
- 48
- Inventors
- 154
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 3 | 0 |
| 2002 | 4 | 6 |
| 2003 | 3 | 6 |
| 2004 | 8 | 5 |
| 2005 | 3 | 7 |
| 2006 | 4 | 3 |
| 2007 | 3 | 0 |
| 2008 | 1 | 1 |
| 2009 | 1 | 3 |
| 2010 | 2 | 2 |
| 2011 | 1 | 0 |
| 2012 | 0 | 1 |
| 2013 | 3 | 4 |
| 2014 | 4 | 4 |
| 2015 | 6 | 4 |
| 2016 | 5 | 6 |
| 2017 | 7 | 4 |
| 2018 | 5 | 8 |
| 2019 | 3 | 6 |
| 2020 | 6 | 8 |
| 2021 | 8 | 4 |
| 2022 | 3 | 3 |
| 2023 | 1 | 5 |
| 2024 | 2 | 4 |
| 2025 | 5 | 1 |
| 2026 | 5 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Current sensing in non-CMOS semiconductor technology for power conversion applications22 Sep 2026US 12,742,801 B2Intel Corporation
- Circuit arrangement, semiconductor module, electrical system, and method for optically outputting information with the aid of a MOSFET4 Aug 2026US 12,699,239 B2Robert Bosch GmbH
- Integrated circuits with self-aligned tub architecture14 Jul 2026US 12,684,824 B2Intel Corporation
- PCB land pad for three-pin MOSFET component21 Apr 2026US 12,610,464 B2Micron Technology, Inc.
- Gate-all-around/multi-gate semiconductor device with body contact, method of manufacturing gate-all-around/multi-gate semiconductor device with body contact, and electronic apparatus27 Jan 2026US 12,538,515 B2Institute of Microelectronics, Chinese Academy of Sciences
- Integrated circuits with self-aligned tub architecture24 Sep 2026US 2026/0293219 A1Intel Foundry IP LLC
- Pcb land pad for three-pin mosfet component30 Jul 2026US 2026/0223289 A1Micron Technology, Inc.
- Semiconductor device and method of fabricating the same8 Jan 2026US 2026/0013182 A1Samsung Electronics Co., Ltd.
- Methods and apparatus to provide welding power25 Dec 2025US 2025/0387847 A1Illinois Tool Works Inc.
- Methods and apparatus to provide welding power26 Sep 2024US 2024/0316674 A1Illinois Tool Works Inc.
Most cited
By later US patents
- Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation260US 5,559,368 AThe Regents of the University of California · 1996
- Delta doped and counter doped dynamic threshold voltage MOSFET for ultra-low voltage operation169US 5,780,899 AThe Regents of the University of California · 1998
- SRAM cells with two P-well structure148US 6,677,649 B2Hitachi, Ltd. · 2004
- Semiconductor device108US 6,512,252 B1Matsushita Electric Industrial Co., Ltd. · 2003
- DTMOS device having low threshold voltage84US 6,753,555 B2Matsushita Electric Industrial Co., Ltd. · 2004