Gate-all-around/multi-gate semiconductor device with body contact, method of manufacturing gate-all-around/multi-gate semiconductor device with body contact, and electronic apparatus

A method of manufacturing a semiconductor device, comprising:

• providing, on a substrate, a stack of a first source/drain defining layer, a first channel defining layer, a body contact defining layer, a second channel defining layer and a second source/drain defining layer;
• forming an active layer on a vertical sidewall of the stack extending in a first direction;
• respectively driving a dopant in the first source/drain defining layer, a dopant in the body contact defining layer and a dopant in the second source/drain defining layer into corresponding portions of the active layer, so as to form a lower source/drain region, a body contact region and an upper source/drain region, respectively;
• forming an isolation layer surrounding the stack;
• removing the first channel defining layer and the second channel defining layer;
• forming a gate stack on the isolation layer, wherein the gate stack comprises a first gate stack and a second gate stack, the first gate stack and the second gate stack are disposed on a first side and a second side which are opposite to each other in a second direction intersecting the first direction, and the second gate stack enters a space between the first source/drain defining layer and the body contact defining layer and a space between the body contact defining layer and the second source/drain defining layer;
• and
• forming a body contact portion to the body contact defining layer.