Transistor and semiconductor device
AssigneeJapan Science and Technology Corporation
InventorsMasashi Kawasaki, Hideo Ohno
Life of this patent
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Abstract
A transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like. A channel layer 11 formed of a transparent semiconductor such as zinc oxide ZnO. A transparent electrode is used for all of a source 12, a drain 13 and a gate 14, or a part of them. As the transparent electrode, a transparent conductive material such as conductive ZnO doped with, for example, group III elements is used. As a gate insulating layer 15, a transparent insulative material such as insulative ZnO doped with elements capable of taking a valence of one as a valence number or group V elements is used. If a substrate 16 must be transparent, for example, glass, sapphire, plastic or the like can be used as a transparent material.
Claims44
A transistor comprising:
- a transparent channel layer using any one of zinc oxide ZnO, zinc magnesium oxide MgxZn1−xO, zinc cadmium oxide CdxZn1−xO and cadmium oxide CdO;
- and
- a source, a drain and a gate each of which is in contact with said transparent channel layers and said gate is at least partially between said source and said drain;
- contacts to at least one of said source, said drain, and said gate, in which said contacts to at least one of said source, said drain, and said gate include a transparent conductive material.
A transistor comprising:
- a transparent channel layer including any one of, zinc magnesium oxide MgxZn1−xO, zinc cadmium oxide CdxZn1−xO and cadmium oxide CdO;
- and
- a source, a drain and a gate each of which is in contact with said transparent channel layer.
A method of forming a transistor comprising:
- depositing a transparent channel layer using any one of zinc oxide ZnO, zinc magnesium oxide MgxZn1−xO, zinc cadmium oxide CdxZn1−xO and cadmium oxide CdO;
- and
- depositing contacts to a source region in said channel layer, a drain region in said channel layer, and a gate region in said channel layer, wherein at least one of said contacts includes a transparent conductive material.
Dependencies are inferred from the claim text.