H10D 30/63
Vertical igfets
Official title: Vertical IGFETs (H10D30/66 {, H10D30/6728, H10D30/689, H10D30/693} take precedence)
H10D30/63 (Vertical igfets) appears on 5,044 US grants and 5,296 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,044
- Published applications
- 5,296
- Assignees
- 570
- Inventors
- 4,866
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 6 | 0 |
| 1979 | 3 | 0 |
| 1980 | 7 | 0 |
| 1981 | 4 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 3 | 0 |
| 1985 | 3 | 0 |
| 1986 | 6 | 0 |
| 1987 | 7 | 0 |
| 1988 | 10 | 0 |
| 1989 | 9 | 0 |
| 1990 | 10 | 0 |
| 1991 | 20 | 0 |
| 1992 | 16 | 0 |
| 1993 | 10 | 0 |
| 1994 | 17 | 0 |
| 1995 | 19 | 0 |
| 1996 | 15 | 0 |
| 1997 | 17 | 0 |
| 1998 | 19 | 0 |
| 1999 | 22 | 0 |
| 2000 | 30 | 0 |
| 2001 | 23 | 10 |
| 2002 | 34 | 40 |
| 2003 | 35 | 40 |
| 2004 | 38 | 52 |
| 2005 | 35 | 55 |
| 2006 | 35 | 58 |
| 2007 | 41 | 78 |
| 2008 | 43 | 89 |
| 2009 | 58 | 127 |
| 2010 | 90 | 134 |
| 2011 | 110 | 138 |
| 2012 | 116 | 174 |
| 2013 | 184 | 263 |
| 2014 | 263 | 360 |
| 2015 | 336 | 401 |
| 2016 | 387 | 347 |
| 2017 | 400 | 359 |
| 2018 | 402 | 460 |
| 2019 | 482 | 424 |
| 2020 | 421 | 444 |
| 2021 | 361 | 288 |
| 2022 | 246 | 249 |
| 2023 | 210 | 236 |
| 2024 | 182 | 198 |
| 2025 | 164 | 172 |
| 2026 | 90 | 100 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Vertical transistors with backside power delivery6 Oct 2026US 12,757,371 B2Apple Inc.
- Semiconductor device including active pattern on bitline6 Oct 2026US 12,757,385 B2Samsung Electronics Co., Ltd.
- Semiconductor device6 Oct 2026US 12,757,434 B2Samsung Electronics Co., Ltd.
- Cross field effect transistor library cell architecture design6 Oct 2026US 12,757,486 B2Advanced Micro Devices, Inc.
- Vertical-transport field-effect transistors with shared backside power supply6 Oct 2026US 12,757,717 B2International Business Machines Corporation
- Semiconductor structure and method of manufacturing the same8 Oct 2026US 2026/0313878 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Defect free low temperature junction formation for 4f2 dram8 Oct 2026US 2026/0313935 A1APPLIED Materials.Inc.
- Mosfet device8 Oct 2026US 2026/0314037 A1Vishay-Siliconix
- Semiconductor memory device1 Oct 2026US 2026/0304744 A1Samsung Electronics Co., Ltd.
- Semiconductor structure and method of manufacturing the same1 Oct 2026US 2026/0304751 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Self-aligned wrapped-around structure876US 9,209,247 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Silicide regions in vertical gate all around (VGAA) devices and methods of forming same841US 9,412,817 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method of manufacturing a substrate using an SiGe layer600US 6,607,948 B1Kabushiki Kaisha Toshiba · 2003
- Metal silicide, metal germanide, methods for making the same559US 9,129,897 B2ASM International N.V. · 2015