Self-aligned wrapped-around structure

A method of making a self-aligned vertical gate-all-around device, comprising:

• depositing a gate layer around an initial exposed portion of a semiconductor column and over an initial oxide layer;
• forming an additional oxide layer over the gate layer and planarizing the additional oxide layer;
• performing an etchback process to recess the additional oxide layer and a portion of the gate layer wrapped around the initially exposed portion of the semiconductor column;
• forming a spacer around the gate layer remaining around the initially exposed portion of the semiconductor column and a subsequently exposed portion of the semiconductor column;
• forming a photoresist over a protected portion of the gate layer and a first portion of the spacer;
• etching away an unprotected portion of the gate layer disposed outside a periphery collectively defined by the spacer and the photoresist to form a gate having a footer portion and a non-footer portion, the footer portion and the non-footer portion collectively encircling the semiconductor column;
• and
• removing the photoresist and the spacer.

A method of making a self-aligned vertical gate-all-around device, comprising:

• forming a gate layer over a substrate, the gate layer having a semiconductor feature protruding the gate layer;
• forming a spacer around the semiconductor feature, the spacer covering a portion of the gate layer;
• forming a patterned mask, the patterned mask covering a portion of the spacer and a portion of the gate layer;
• patterning the gate layer to remove portions of the gate layer unprotected by one or more of the spacer and the patterned mask;
• and
• removing the patterned mask.