Back to results
US 12,757,717 B2Granted
Vertical-transport field-effect transistors with shared backside power supply
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Albert M. Chu, Ruilong Xie, Junli Wang
Life of this patent
Estimating the term…
Abstract
A first VTFET is provided on a wafer. A second VTFET is adjacent to the first VTFET on the wafer. A backside power deliver network is on a backside of the wafer. A shared frontside contact is on a frontside of the wafer. The shared frontside contact is connected to a first top source/drain region of the first VTFET, a second top source/drain region of the second VTFET, and the backside power delivery network.
Claims20
A semiconductor device comprising:
- a first vertical-transport field-effect transistor (VTFET) on a wafer;
- a second VTFET adjacent to the first VTFET on the wafer;
- a backside power delivery network on a backside of the wafer;
- a shared frontside contact, wherein:
- the shared frontside contact is on a frontside of the wafer;
- and
- the shared frontside contact is directly connected to a first top source/drain region of the first VTFET, a second top source/drain region of the second VTFET, and a shared backside contact;
- and
- a shared bottom source/drain region directly connected to the shared backside contact and a plurality of additional VTFETs, and connected to a backside power delivery network.
6 more elements
A semiconductor device comprising:
- a first row of vertical-transport field-effect transistors (VTFETs) on the semiconductor device;
- a second row of VTFETs;
- a backside power delivery network on a backside of the semiconductor device, wherein the backside power delivery network is directly connected to a backside contact directly connected to a source/drain region on the backside of at least one of the first row;
- and
- a shared top contact on a frontside of the semiconductor device directly connected to i) a shared backside contact directly connected to a shared bottom source/drain region of the first row;
- ii) a top plurality of source/drain regions of the first row;
- and iii) a top contact directly connected to a source/drain region of the second row.
4 more elements
A semiconductor device comprising:
- a first vertical-transport field-effect transistor (VTFET) on a wafer;
- a second VTFET adjacent to the first VTFET on the wafer;
- a third VTFET adjacent to the first VTFET on the wafer on a row different from the second VTFET;
- wherein the first VTFET, the second VTFET, and the third VTFET are each a first width, wherein the first width is a contacted poly pitch (CPP);
- a shared frontside contact connected to the first VTFET and the second VTFET;
- and
- a top contact directly connected to, and oriented perpendicularly to, the shared frontside contact and directly connected to the third VTFET, wherein the shared frontside contact is on a frontside of the wafer and electrically connected to a backside power delivery network.
4 more elements
Dependencies are inferred from the claim text.