Vertical gate all around (VGAA) devices and methods of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Lien Huang, Chun-Hsiung Lin, Chi-Wen Liu
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Abstract
Vertical gate all around (VGAA) devices and methods of manufacture thereof are described. A method for manufacturing a VGAA device includes: forming a first doped region having a first conductivity in a substrate; forming a second doped region having a second conductivity different from the first conductivity in the substrate, the second doped region disposed laterally adjacent to and spaced apart from the first doped region; and oxidizing a semiconductive layer disposed between the substrate and the second doped region to form an oxidized isolation layer.
Claims20
A method comprising:
- forming a first doped region having a first conductivity in a substrate;
- forming a second doped region having a second conductivity different from the first conductivity in the substrate, the second doped region disposed laterally adjacent to and spaced apart from the first doped region;
- patterning the first doped region to form first protrusions and patterning the second doped region to form second protrusions;
- and
- oxidizing a semiconductive layer disposed between the substrate and the second doped region to form an oxidized isolation layer.
A method, comprising:
- forming a first opening in a substrate;
- filling the first opening with a first semiconductor material having a first conductivity type;
- forming a second opening laterally adjacent to the first semiconductor material, wherein a bottom surface of the second opening is lined with a semiconductive layer;
- filling the second opening with a second semiconductor material having a second conductivity type different from the first conductivity type, the second semiconductor material overlying the semiconductive layer;
- forming a recess between the first semiconductor material and the second semiconductor material, the recess exposing an edge region of the semiconductive layer;
- and
- oxidizing the semiconductive layer having the exposed edge region to form an oxidized isolation layer.
A vertical gate all around device, comprising:
- a semiconductor substrate;
- a first doped region over the semiconductor substrate and comprising first protrusions;
- a second doped region over the semiconductor substrate and comprising second protrusions, the second doped region disposed laterally adjacent to and spaced apart from the first doped region;
- an oxidized isolation layer disposed between the second doped region and the semiconductor substrate;
- and
- a first gate stack disposed around the first protrusions and a second gate stack disposed around the second protrusions.
Dependencies are inferred from the claim text.