H10D 30/635
Having no inversion channels
Official title: {having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs}
H10D30/635 (Having no inversion channels) appears on 533 US grants and 568 published applications in this corpus.
Search patents in H10D- Granted patents
- 533
- Published applications
- 568
- Assignees
- 185
- Inventors
- 783
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 2 | 0 |
| 1998 | 4 | 0 |
| 1999 | 8 | 0 |
| 2000 | 9 | 0 |
| 2001 | 7 | 4 |
| 2002 | 7 | 5 |
| 2003 | 12 | 14 |
| 2004 | 7 | 20 |
| 2005 | 12 | 26 |
| 2006 | 12 | 21 |
| 2007 | 15 | 24 |
| 2008 | 13 | 38 |
| 2009 | 25 | 39 |
| 2010 | 36 | 23 |
| 2011 | 33 | 16 |
| 2012 | 30 | 32 |
| 2013 | 26 | 21 |
| 2014 | 28 | 34 |
| 2015 | 35 | 33 |
| 2016 | 22 | 16 |
| 2017 | 20 | 19 |
| 2018 | 23 | 17 |
| 2019 | 13 | 25 |
| 2020 | 16 | 22 |
| 2021 | 22 | 20 |
| 2022 | 16 | 24 |
| 2023 | 12 | 30 |
| 2024 | 17 | 19 |
| 2025 | 23 | 13 |
| 2026 | 9 | 13 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Metal oxide semiconductor field effect transistors (MOSFET) including deep P-wells and methods of forming same18 Aug 2026US 12,713,672 B2The Research Foundation for The State University of New York
- Power semiconductor device and method for manufacturing a power semiconductor device2 Jun 2026US 12,648,209 B2Hitachi Energy Ltd
- Vertical field-effect transistor and method for its formation21 Apr 2026US 12,610,577 B2Robert Bosch GmbH
- Semiconductor laminate, semiconductor device, and method for manufacturing semiconductor device31 Mar 2026US 12,593,625 B2Shin-Etsu Chemical Co., Ltd.
- Method and system for routing of electrical conductors over neutralized power FETS24 Mar 2026US 12,588,239 B2Semiconductor Components Industries, LLC
- Semiconductor device13 Aug 2026US 2026/0239665 A1Samsung Electronics Co., Ltd.
- Crystalline oxide semiconductor film, layered structure, and semiconductor device23 Jul 2026US 2026/0209989 A1Shin-Etsu Chemical Co., Ltd.
- Vertical gallium nitride transistors11 Jun 2026US 2026/0164742 A1Power Integrations, Inc.
- Method and system for routing of electrical conductors over neutralized power fets30 Apr 2026US 2026/0122959 A1Semiconductor Components Industries, LLC
- Semiconductor device19 Mar 2026US 2026/0082641 A1
Most cited
By later US patents
- Low leakage heterojunction vertical transistors and high performance devices thereof439US 6,943,407 B2International Business Machines Corporation · 2005
- Trench-gated MOSFET with bidirectional voltage clamping314US 6,049,108 ASiliconix Incorporated · 2000
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Silicon carbide semiconductor device208US 5,976,936 ADenso Corporation · 1999
- Low resistance power MOSFET or other device containing silicon-germanium layer203US 6,239,463 B1Siliconix Incorporated · 2001