Crystalline oxide semiconductor film, layered structure, and semiconductor device
AssigneeShin-Etsu Chemical Co., Ltd.
InventorTakahiro SAKATSUME
Life of this patent
Estimating the term…
Abstract
A crystalline oxide semiconductor film that is a uniaxially oriented film containing α-Ga2O3 as a main component, wherein a total area (C2) of peaks of a rotational domain with respect to a total area (C1) of peaks of the crystalline oxide semiconductor film, which are obtained by φ scan of X-ray diffraction measurement of an asymmetric plane of the crystalline oxide semiconductor film, is the total area (C2) of the peaks of the rotational domain being less than 5 counts with respect to 1,000,000 counts of the total area (C1) of the peaks of the crystalline oxide semiconductor film. The crystalline oxide semiconductor film is provided that has satisfactory crystallinity in which the rotational domain is reduced.
Claims25
A crystalline oxide semiconductor film, wherein the crystalline oxide semiconductor film is a uniaxially oriented film containing α-Ga2O3 as a main component, wherein a total area (C2) of peaks of a rotational domain with respect to a total area (C1) of peaks of the crystalline oxide semiconductor film, which are obtained by φ scan of X-ray diffraction measurement of an asymmetric plane of the crystalline oxide semiconductor film, is the total area (C2) of the peaks of the rotational domain being less than 5 counts with respect to 1,000,000 counts of the total area (C1) of the peaks of the crystalline oxide semiconductor film.
A crystalline oxide semiconductor film, wherein
- the crystalline oxide semiconductor film is a uniaxially oriented film containing α-Ga2O3 as a main component, wherein a total area (C2) of peaks of a rotational domain with respect to a total area (C1) of peaks of the crystalline oxide semiconductor film, which are obtained by φ scan of X-ray diffraction measurement of an asymmetric plane of the crystalline oxide semiconductor film, is the total area (C2) of the peaks of the rotational domain being 0 count with respect to 500,000 counts of the total area (C1) of the peaks of the crystalline oxide semiconductor film.
Dependencies are inferred from the claim text.