Semiconductor device

A semiconductor device in which three mutually intersecting directions are defined as a first direction, a second direction and a third direction, one side in the third direction is defined as a first side, and the other side is defined as a second side, comprising:

• a semiconductor member having a groove part that extends in the first direction, is arranged in the second direction, and is recessed toward the first side, and a recess that is positioned between a pair of the groove parts in the second direction and is recessed toward the first side;
• a drain electrode that is positioned on the first side of the semiconductor member;
• a gate electrode that is disposed inside the groove part;
• a source electrode of which at least a part is disposed inside the recess;
• a first insulating layer that is disposed inside the groove part and positioned between an inner surface of the groove part and the gate electrode;
• and
• a second insulating layer that is disposed inside the recess and positioned between an inner surface of the recess and the source electrode,
• wherein the semiconductor member has a drift region having first conductivity type impurities and positioned on the first side relative to a bottom of the groove part and
• a mesa region having the first conductivity type impurities and positioned between the pair of groove parts in the second direction,
• wherein the mesa region has a Schottky junction that forms a Schottky junction with the source electrode, and
• wherein the Schottky junction is positioned on the second side relative to an end on the first side of the source electrode and on the second side relative to an end on the first side of the gate electrode.