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US 12,610,577 B2Granted
Vertical field-effect transistor and method for its formation
AssigneeRobert Bosch GmbH
InventorsJens Baringhaus, Joachim Rudhard
Life of this patent
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Abstract
A vertical field-effect transistor. The vertical field-effect transistor includes: a drift region, a semiconductor fin on or above the drift region, and a source/drain electrode on or above the semiconductor fin. The semiconductor fin includes at least one concave side wall in the region between the drift region and the source/drain electrode.
Claims10
A vertical field-effect transistor, comprising:
- a drift region;
- a semiconductor fin on or above the drift region;
- a source/drain electrode on or above the semiconductor fin, the semiconductor fin including at least one concave side wall in a region between the drift region and the source/drain electrode,
- a gate electrode formed laterally next to at least one side wall of the semiconductor fin,
- the at least one concave side wall being formed in that the semiconductor fin has a smaller lateral extent in a first portion, which is arranged laterally next to the gate electrode, than in a second portion, which makes contact with the drift region, and/or than in a third portion, which makes contact with the source/drain electrode,
- wherein the at least one concave side wall faces laterally toward the gate electrode and defines a reduced lateral width of the semiconductor fin at a central portion located between upper and lower portions of the semiconductor fin, such that the semiconductor fin is narrower in the central portion than both the upper portion adjacent to the source/drain electrode and the lower portion adjacent to the drift region.
3 more elements
A method for forming a vertical field-effect transistor, the method comprising:
- forming a drift region;
- forming a semiconductor fin on or above the drift region;
- and
- forming a source/drain electrode on or above the semiconductor fin, the semiconductor fin being formed with at least one concave side wall in a region between the drift region and the source/drain electrode,
- wherein a gate electrode is formed laterally next to at least one side wall of the semiconductor fin, the at least one concave side wall being formed in that the semiconductor fin has a smaller lateral extent in a first portion, which is arranged laterally next to the gate electrode, than in a second portion, which makes contact with the drift region, and/or than in a third portion, which makes contact with the source/drain electrode,
- wherein the at least one concave side wall faces laterally toward the gate electrode and defines a reduced lateral width of the semiconductor fin at a central portion located between upper and lower portions of the semiconductor fin, such that the semiconductor fin is narrower in the central portion than both the upper portion adjacent to the source/drain electrode and the lower portion adjacent to the drift region.
3 more elements
Dependencies are inferred from the claim text.