H10D 30/202
Fets having static field-induced regions
Official title: {FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]}
H10D30/202 (Fets having static field-induced regions) appears on 265 US grants and 109 published applications in this corpus.
Search patents in H10D- Granted patents
- 265
- Published applications
- 109
- Assignees
- 119
- Inventors
- 340
- Latest grant
- 27 Jan 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 3 | 0 |
| 1982 | 5 | 0 |
| 1983 | 4 | 0 |
| 1984 | 7 | 0 |
| 1985 | 6 | 0 |
| 1986 | 4 | 0 |
| 1987 | 14 | 0 |
| 1988 | 9 | 0 |
| 1989 | 10 | 0 |
| 1990 | 10 | 0 |
| 1991 | 8 | 0 |
| 1992 | 14 | 0 |
| 1993 | 7 | 0 |
| 1994 | 11 | 0 |
| 1995 | 3 | 0 |
| 1996 | 11 | 0 |
| 1997 | 8 | 0 |
| 1998 | 6 | 0 |
| 1999 | 9 | 0 |
| 2000 | 3 | 0 |
| 2001 | 5 | 3 |
| 2002 | 4 | 10 |
| 2003 | 5 | 8 |
| 2004 | 13 | 8 |
| 2005 | 7 | 11 |
| 2006 | 6 | 12 |
| 2007 | 7 | 7 |
| 2008 | 5 | 5 |
| 2009 | 8 | 9 |
| 2010 | 14 | 3 |
| 2011 | 5 | 6 |
| 2012 | 2 | 2 |
| 2013 | 2 | 3 |
| 2014 | 1 | 0 |
| 2015 | 3 | 2 |
| 2016 | 2 | 2 |
| 2017 | 1 | 2 |
| 2018 | 2 | 2 |
| 2019 | 3 | 1 |
| 2020 | 0 | 4 |
| 2021 | 4 | 2 |
| 2022 | 1 | 1 |
| 2023 | 1 | 2 |
| 2024 | 2 | 3 |
| 2025 | 2 | 0 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Manufacturable gallium containing electronic devices27 Jan 2026US 12,538,537 B2KYOCERA SLD Laser, Inc.
- SiC static induction transistor with double side cooling and method of manufacture18 Nov 2025US 12,477,768 B2Analog Power Conversion LLC
- Lateral fin static induction transistor3 Jun 2025US 12,324,178 B2HRL Laboratories, LLC
- Dynamically doped field-effect transistor and a method for controlling such26 Nov 2024US 12,154,979 B2Imec Vzw
- Lateral fin static induction transistor7 May 2024US 11,978,789 B2HRL Laboratories, LLC
- Manufacturable gallium containing electronic devices4 Jun 2026US 2026/0156886 A1KYOCERA SLD Laser, Inc.
- Sic static induction transistor with double side cooling and method of manufacture7 Nov 2024US 2024/0371989 A1Analog Power Conversion LLC
- Lateral fin static induction transistor25 Jul 2024US 2024/0250160 A1HRL Laboratories, LLC
- Semiconductor devices with additional mesa structures for reduced surface roughness2 May 2024US 2024/0145537 A1Wolfspeed, Inc.
- Semiconductor element and semiconductor device14 Sep 2023US 2023/0290888 A1Flosfia Inc.
Most cited
By later US patents
- Semiconductor device including a vertical field effect transistor, having trenches, and a diode336US 7,307,313 B2Denso Corporation · 2007
- Semiconductor device using whiskers265US 5,362,972 AHitachi, Ltd. · 1994
- Vertical field effect transistor and diode197US 6,097,046 ATexas Instruments Incorporated · 2000
- Vertical insulated gate transistor and method of manufacture188US 5,473,176 AKabushiki Kaisha Toshiba · 1995
- Nanotube permeable base transistor132US 6,759,693 B2Nantero, Inc. · 2004