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US 6,097,046 AGranted
Vertical field effect transistor and diode
AssigneeTexas Instruments Incorporated
InventorDonald L. Plumton
Life of this patent
Estimating the term…
Abstract
A vertical field effect transistor (1400) and diode (1450) formed on a single III-V substrate. The diode cathode and the transistor drain or collector may be formed in a common layer (1408).
Claims3
An integrated circuit, comprising:
- (a) a vertical field effect transistor with parallel buried gate fingers and with a drain in a first portion of a first layer of semiconductor material;
- and
- (b) a diode with a cathode including a second portion of said first layer and spaced from said first portion;
- (c) wherein (i) said first layer includes a portion of a GaAs substrate doped n type to a first concentration and an epilayer of GaAs doped to a second concentration which is less than said first concentration, (ii) said gate fingers are p type GaAs on said epilayer with n type GaAs channels on said epilayer between adjacent ones of said gate fingers, (iii) a source layer of n type GaAs is on said gate fingers and channels, (iv) said cathode includes a portion of said epilayer and said substrate, and (v) a trench in said epilayer separates said transistor and said diode.
1 more element
An integrated circuit, comprising:
- (a) a vertical field effect transistor with parallel buried gate fingers and with a drain in a first portion of a first layer of semiconductor material;
- and
- (b) a diode with a cathode including a second portion of said first layer and spaced from said first portion;
- (c) wherein (i) said first layer includes a portion of a GaAs substrate doped n type to a first concentration and an epilayer of GaAs doped to a second concentration which is less than said first concentration, (ii) said gate fingers are p type GaAs on said epilayer with n type GaAs channels on said epilayer between adjacent ones of said gate fingers, (iii) a source layer of n type GaAs is on said gate fingers and channels, (iv) said cathode includes a portion of said epilayer and said substrate, and (v) said cathode includes a portion of said source layer spaced from said gate fingers and channels.
1 more element
An integrated circuit, comprising:
- (a) a vertical field effect transistor with parallel buried gate fingers and with a drain in a first portion of a first layer of semiconductor material;
- and
- (b) a diode with a cathode including a second portion of said first layer and spaced from said first portion;
- (c) wherein (i) said first layer includes a portion of a GaAs substrate doped n type to a first concentration and an epilayer of GaAs doped to a second concentration which is less than said first concentration, (ii) said gate fingers are p type GaAs on said epilayer with n type GaAs channels on said epilayer between adjacent ones of said gate fingers, (iii) a source layer of n type GaAs is on said gate fingers and channels, (iv) said cathode includes a portion of said epilayer and said substrate, and (v) a p type region extending from a surface of said source layer to said gate fingers and wherein said diode includes a p type anode with doping profile the same as that of said p type region.
1 more element
Dependencies are inferred from the claim text.