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US 5,362,972 AGranted
Semiconductor device using whiskers
AssigneesHitachi, Ltd., Hitachi VLSI Engineering Corp.
InventorsMasamitsu Yazawa, Kenji Hiruma, Toshio Katsuyama, Nobutaka Futigami, Hidetoshi Matsumoto, Hiroshi Kakibayashi, Masanari Koguchi, Gerard P. Morgan, Kensuke Ogawa
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Abstract
A field effect transistor and a ballistic transistor using semiconductor whiskers each having a desired diameter and formed at s desired location, a semiconductor vacuum microelectronic device using the same as electron emitting materials, a light emitting device using the same as quantum wires and the like are disclosed.
Claims48
A semiconductor device, comprising:
- a semiconductor substrate of one conductive type;
- and
- a semiconductor whisker channel which is grown epitaxially on said substrate and has a diameter of 0.1 .mu.m or less to contact with a surface of the substrate at one end thereof and apart from the substrate surface at another end thereof, and acts as a semiconductor quantum wire;
- wherein said whisker channel has two ends and both ends are connected electrically to ohmic electrodes.
1 more element
Dependencies are inferred from the claim text.