Semiconductor devices with additional mesa structures for reduced surface roughness

Abstract

A method of forming a semiconductor device includes etching a semiconductor layer to form a plurality of mesa stripes in the semiconductor layer. The plurality of mesa stripes extend in a first direction and include mesa sidewalls that extend in the first direction and mesa surfaces at opposite ends of the mesa stripes. An additional mesa region is formed at an end of at least one of the mesa stripes. The additional mesa region is electrically insulated from the at least one of the mesa stripes. A semiconductor device structure includes a plurality of mesa stripes that extend in a first direction and include mesa sidewalls that extend in the first direction and mesa end surfaces at opposite ends of the mesa stripes. An additional mesa region that is electrically insulated from the at least one of the mesa stripes is at an end of at least one of the mesa stripes.

Dependencies are inferred from the claim text.